Datasheet

NXP Semiconductors
BT138-800E
4Q Triac
BT138-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 27 July 2012 2 / 12
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 5 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 11 25 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
- 150 - V/µs
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main
terminal 2
1 2
mb
3
TO-220AB (SOT78)
sym051
T1
G
T2
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT138-800E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
BT138-800E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V