Datasheet

NXP Semiconductors
BT138-800E
4Q Triac
BT138-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 27 July 2012 7 / 12
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1.5 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
- 150 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 16 A; V
D
= 800 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs
- 2 - µs
T
j
(°C)
-50 1501000 50
003aaj946
1
2
3
0
I
GT
I
GT(25°C)
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
003aaj947
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature