Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsThyristors & TriacsBTA312X-600C,127

1. Product proﬁle

1.1 General description

Passivated, new generation, high commutation triacs in a SOT186A full pack plastic

package

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

BTA312X series B and C

12 A Three-quadrant triacs high commutation

Rev. 02 — 17 December 2007 Product data sheet

n Very high commutation performance

maximized at each gate sensitivity

n High immunity to dV/dt

n High isolation voltage

n High power motor control - e.g. washing

machines, vacuum cleaners

n Refrigeration and air conditioning

compressors

n Non-linear rectiﬁer-fed motor loads n Electronic thermostats

n V

DRM

≤ 600 V (BTA312X-600B/C) n I

≤ 50 mA (BTA312X-series B)

n V

DRM

≤ 800 V (BTA312X-800B/C) n I

≤ 35 mA (BTA312X-series C)

n I

TSM

≤ 95 A (t = 20 ms) n I

T(RMS)

≤ 12 A

Table 1. Pinning

Pin Description Simpliﬁed outline Symbol

1 main terminal 1 (T1)

SOT186A (TO-220F)

2 main terminal 2 (T2)

3 gate (G)

mb mounting base; isolated

321

sym051

Summary of content (12 pages)

PAGE 1
BTA312X series B and C 12 A Three-quadrant triacs high commutation Rev. 02 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description Passivated, new generation, high commutation triacs in a SOT186A full pack plastic package 1.2 Features n Very high commutation performance maximized at each gate sensitivity n High isolation voltage n High immunity to dV/dt 1.3 Applications n High power motor control - e.g.
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BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package BTA312X-600B Name Description TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3-lead TO-220 ‘full pack’ BTA312X-600C Version BTA312X-800B BTA312X-800C 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 003aab690 16 Ptot (W) conduction angle (degrees) form factor a α = 180° 30 60 90 120 180 4 2.8 2.2 1.9 1.57 120° 12 90° α 60° 30° 8 4 0 0 3 6 9 12 IT(RMS) (A) α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aab680 100 ITSM (A) 80 60 40 ITSM IT t 20 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles (n) f = 50 Hz Fig 2.
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BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 003aab691 103 ITSM (A) (1) 102 ITSM IT t tp Tj(init) = 25 °C max 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values 003aab681 80 IT(RMS) (A) 70 003aab679 15 IT(RMS) (A) 60 10 50 40 30 5 20 10 0 10-2 10-1 1 10 surge duration (s) 0 -50 0 50 100 Th (°C) 150 f = 50 Hz Th = 61 °C Fig 4.
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BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-h) Conditions Min Typ Max Unit thermal resistance from junction to full or half cycle; without heatsink heatsink compound; see Figure 6 - - 5.5 K/W full or half cycle; with heatsink compound; see Figure 6 - - 4.
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BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 7. Static characteristics Table 6. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter IGT IL gate trigger current Conditions BTA312X-600B BTA312X-800B BTA312X-600C BTA312X-800C Unit Min Typ Max Min Typ Max T2+ G+ 2 - 50 2 - 35 mA T2+ G− 2 - 50 2 - 35 mA T2− G− 2 - 50 2 - 35 mA VD = 12 V; IT = 0.1 A; see Figure 8 latching current VD = 12 V; IGT = 0.
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BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 8. Dynamic characteristics Table 7. Dynamic characteristics Symbol Parameter dVD/dt rate of rise of off-state voltage Conditions BTA312X-600B BTA312X-800B VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit Typ Max Min Typ Max 1000 2000 - 500 - - V/µs 30 - - 20 - - A/ms - 2 - - 2 - µs gate-controlled ITM = 20 A; VD = VDRM(max); IG = 0.
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BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 003aab678 40 001aab100 3 IT (A) IL IL(25°C) 30 2 20 1 (1) 10 (2) (3) 0 0 0.5 1 1.5 2 VT (V) 0 −50 2.5 0 50 100 150 Tj (°C) Vo = 1.127 V Rs = 0.027 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10.
PAGE 9
BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 10. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.
PAGE 10
BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA312X_SER_B_C_2 20071217 Product data sheet - BTA312X_SER_B_C_1 Modifications: • BTA312X-800C product added: – Section 1.4 “Quick reference data” on page 1 updated. – Section 3 “Ordering information” on page 2 updated. – Section 4 “Limiting values” on page 2 updated.
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BTA312X series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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NXP Semiconductors BTA312X series B and C 12 A Three-quadrant triacs high commutation 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .