Datasheet

1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.
1.2 Features and benefits
 Fast switching
 High voltage capability
 Integrated anti-parallel E-C diode
 Very low switching and conduction
losses
1.3 Applications
 DC-to-DC converters
 Electronic lighting ballasts
 Inverters
 Motor control systems
1.4 Quick reference data
BUJD203A
NPN power transistor with integrated diode
Rev. 02 — 2 December 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
C
collector current see Figure 1; see Figure 2; DC;
see Figure 4
--4A
P
tot
total power
dissipation
see Figure 3; T
mb
≤ 25°C --80W
V
CESM
collector-emitter
peak voltage
V
BE
=0V --850V
Static characteristics
h
FE
DC current gain I
C
=500mA; V
CE
=5V;
see Figure 11
; T
j
=25°C
13 21 32
V
CE
=5V; I
C
=3A;
T
mb
= 25 °C; see Figure 11
-12.5-
V
CEOsus
collector-emitter
sustaining voltage
I
B
=0A; L
C
=25mH;
I
C
=10mA; see Figure 6;
see Figure 7
400 450 - V