Datasheet

BUK7109-75AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Electrostatically robust due to
integrated protection diodes
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Reduced component count due to
integrated current sensor
 Suitable for standard level gate drive
sources
1.3 Applications
 Electrical Power Assisted Steering
(EPAS)
 Variable Valve Timing for engines
1.4 Quick reference data
[1] Current is limited by power dissipation chip rating.
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 75 V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 2; see Figure 3
[1] - - 120 A
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=50A;
T
j
= 25 °C; see Figure 7;
see Figure 8
- 89mΩ
I
D
/I
sense
ratio of drain current
to sense current
T
j
>-55°C; T
j
< 175 °C;
V
GS
>10V
450 500 550