Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK7208-40B,118, MOSFET

BUK7208-40B

N-channel TrenchMOS standard level FET

Rev. 03 — 7 June 2010 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

on-state resistance

 Q101 compliant

 Suitable for standard level gate drive

sources

 Suitable for thermally demanding

environments due to 185 °C rating

1.3 Applications

 12 V loads

 Automotive systems

 General purpose power switching

 Motors, lamps and solenoids

1.4 Quick reference data

[1] Continuous current is limited by package.

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 185°C --40V

drain current V

=10V; T

=25°C;

see Figure 1; see Figure 3

[1]

--75A

tot

total power dissipation T

= 25 °C; see Figure 2 --167W

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=25A;

=25°C; see Figure 11;

see Figure 12

-6.68mΩ

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source avalanche

energy

=75A; V

sup

≤ 40 V;

=50Ω; V

=10V;

j(init)

= 25 °C; unclamped

--242mJ

Dynamic characteristics

gate-drain charge V

=10V; I

=25A;

=32V; T

=25°C;

see Figure 13

-11.5-nC

Summary of content (14 pages)

PAGE 1
BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain[1] Simplified outline Graphic symbol D mb 3 S source mb D mounting base; connected to drain G mbb076 S 2 1 3 SOT428 (DPAK) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 03nl45 150 Pder (%) ID (A) 100 80 Capped at 75A due to package 50 40 0 0 0 Fig 1. 03no96 120 50 100 0 150 200 Tmb (°C) Normalized continuous drain current as a function of mounting base temperature Fig 2.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 0.95 K/W Rth(j-a) thermal resistance from junction to ambient - 71.4 - K/W 03nk52 1 δ = 0.5 Zth(j-mb) (K/W) 10−1 0.2 0.1 0.05 0.02 δ= P 10−2 tp T single shot t tp 10−3 10−6 T 10−5 10−4 10−3 10−2 10−1 1 tp (s) Fig 4.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 40 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 36 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.4 V ID = 1 mA; VDS = VGS; Tj = 185 °C; see Figure 10 0.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 03nl41 400 20 16 14 12 ID (A) 300 03nl40 16 Label is VGS (V) RDSon (mΩ) 12 10 9.5 9 200 8.5 8 100 0 0 2 4 8 7.5 7 6.5 6 5.5 5 4.5 6 4 8 10 5 10 15 VDS (V) Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 03nl39 100 03no98 5 VGS(th) ID (A) (V) 4 75 max 3 typ 50 2 min 25 Tj = 185 °C 1 Tj = 25 °C 0 0 Fig 9. 2 4 6 VGS (V) 0 −60 8 Transfer characteristics: drain current as a function of gate-source voltage; typical values RDSon (mΩ) 150 220 Tj (°C) 03np03 2 6.5 6 80 Fig 10. Gate-source threshold voltage as a function of junction temperature 03nl42 20 10 a 7 10 8 15 1.5 10 1 20 0.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 03nl37 10 03nl43 3000 VGS (V) C (pF) 8 VDD = 14 V Ciss VDD = 32 V 2000 Coss 6 4 1000 Crss 2 0 10−1 0 0 10 20 30 40 1 QG (nC) Fig 13. Gate-source voltage as a function of gate charge; typical values 10 VDS (V) 102 Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03nl36 100 IS (A) 75 50 Tj = 185 °C Tj = 25 °C 25 0 0 0.3 0.6 0.9 1.2 VSD (V) Fig 15.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L L2 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.46 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7208-40B_3 20100607 Product data sheet - BUK7208-40B_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
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BUK7208-40B NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . .