Datasheet

BUK753R8-80E
N-channel TrenchMOS standard level FET
11 September 2012 Product data sheet
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1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
•
AEC Q101 compliant
•
Repetitive avalanche rated
•
Suitable for thermally demanding environments due to 175 °C rating
•
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
•
12V, 24V and 48V Automotive systems
•
Electric and electro-hydraulic power steering
•
Motors, lamps and solenoid control
•
Start-Stop micro-hybrid applications
•
Transmission control
•
Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 80 V
I
D
drain current V
GS
= 10 V; T
mb
= 25 °C; Fig. 1 [1] - - 120 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 349 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
- 3.3 4 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 10 V; I
D
= 25 A; V
DS
= 64 V;
Fig. 13; Fig. 14
- 51 - nC
[1] Continuous current is limited by package.