Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK7610-55AL,118, MOSFET

Table Of Contents

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized

for linear operation. This product has been designed and qualified to the appropriate AEC

standard for use in automotive critical applications.

1.2 Features

1.3 Applications

1.4 Quick reference data

[1] Continuous current is limited by package.

BUK7610-55AL

N-channel TrenchMOS standard level FET

Rev. 02 — 9 January 2008 Product data sheet

 175 °C rated  Q101 compliant

 Stable operation in linear mode  TrenchMOS technology

 12 V and 24 V loads  Automotive systems

 DC linear motor control  Repetitive clamped inductive switching

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

drain current V

=10V; T

=25°C;

see Figure 4 and 1

[1]

--75A

tot

total power dissipation T

=25°C; see Figure 2 - - 300 W

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source

avalanche energy

=75A; V

sup

≤ 55 V;

=50Ω; V

=10V;

j(init)

=25°C; unclamped

inductive load

--1.1J

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=25A;

=25°C; see Figure 12 and

-8.510mΩ

Summary of content (13 pages)

PAGE 1
BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 — 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Simplified outline Graphic symbol D mb G mbb076 S 2 1 3 SOT404 (D2PAK) 3. Ordering information Table 3.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET [1] Current is limited by power dissipation chip rating. [2] Refer to document 9397 750 12572 for further information. [3] Continuous current is limited by package. [4] Single shot avalanche rating limited by maximum junction temperature of 175 °C. [5] Repetitive avalanche rating limited by average junction temperature of 170 °C. [6] Refer to application note AN10273 for further information.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 003aaa737 103 Limit RDSon = VDS / ID ID (A) tp = 10 μ s 100 μ s 102 (1) 1 ms DC 10 ms 10 100 ms 1 1 10 102 VDS (V) Tmb = 25 °C; IDM is single pulse (1) Capped at 75 A due to package. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 003aaa734 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 δ= P 10-2 single shot tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 6.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET Table 6. Symbol Characteristics …continued Parameter Conditions Min Typ Max Unit IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 16 - 0.85 1.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 003aaa729 400 ID (A) 8 9 10 15 VGS (V) = 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 200 100 0 0 7 RDSon (mΩ) 20 18 16 14 12 300 003aaa731 20 2 4 6 10 VGS (V) = 20 5 0 8 VDS (V) 10 0 T j = 25 °C 100 200 300 ID (A) 400 T j = 25 °C Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 003aaa732 40 gfs (S) Fig 7.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 3 2 min 10−2 max typ 10−3 min 10−4 typ max 10−5 1 0 −60 0 60 120 180 10−6 0 Tj (°C) 2 4 6 VGS (V) ID = 1 m A; VDS = VGS T j = 25 °C; VDS = VGS Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aaa730 18 03ne89 2 a RDSon (mΩ) 1.5 14 1 10 0.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 003aaa735 10 003aaa738 8000 VGS (V) C (pF) Ciss 8 6000 VDS = 14 V VDS = 44 V 6 Coss 4000 4 C rss 2000 2 0 0 50 100 QG (nC) 0 10-1 150 T j = 25 °C; ID = 25 A 1 10 VDS (V) 102 VGS = 0 V ; f = 1 M H z Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7610-55AL_2 20080109 Product data sheet - BUK75_7610_55AL_1 Modifications: BUK75_7610_55AL_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BUK7610-55AL NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . .