Datasheet

1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
[1] Continuous current is limited by package.
BUK765R2-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 22 November 2011 Product data sheet
D2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current V
GS
=10V; T
mb
=25°C; see Figure 1;
see Figure 3
[1]
--75A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 203 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 11
; see Figure 12
-4.45.2mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=25A; V
DS
=32V;
T
j
=25°C; see Figure 13
-16-nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=75A; V
sup
≤ 40 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
= 25 °C; unclamped
- - 494 mJ