Datasheet

L
F
P
A
K
5
6
D
BUK7K5R6-30E
Dual N-channel 30 V, 5.6 mΩ standard level MOSFET
6 November 2013 Product data sheet
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1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
•
Dual MOSFET
•
Q101 compliant
•
Repetitive avalanche rated
•
Suitable for thermally demanding environments due to 175 °C rating
•
True standard level gate with V
GS(th)
of greater than 1 V at 175 °C
3. Applications
•
12 V Automotive systems
•
Motors, lamps and solenoid control
•
Transmission control
•
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 30 V
I
D
drain current V
GS
= 10 V; T
mb
= 25 °C; Fig. 1 - - 40 A
Static characteristics FET1 and FET2
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 12
- 4.76 5.6 mΩ
Dynamic characteristics FET1 and FET2
Q
GD
gate-drain charge I
D
= 10 A; V
DS
= 24 V; V
GS
= 10 V;
T
j
= 25 °C; Fig. 14; Fig. 15
- 9.5 - nC