Datasheet

L
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P
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BUK7Y12-40E
N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56
9 May 2013 Product data sheet
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1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
•
Q101 compliant
•
Repetitive avalanche rated
•
Suitable for thermally demanding environments due to 175 °C rating
•
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
•
12 V Automotive systems
•
Motors, lamps and solenoid control
•
Transmission control
•
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current V
GS
= 10 V; T
mb
= 25 °C; Fig. 1 - - 52 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 65 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 11
- 9.3 12 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 10 V; I
D
= 15 A; V
DS
= 32 V;
T
j
= 25 °C; Fig. 13; Fig. 14
- 5.2 - nC