Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK7Y18-55B,115, MOSFET

BUK7Y18-55B

N-channel TrenchMOS standard level FET

Rev. 04 — 7 April 2010 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

 Q101 compliant

 Suitable for standard level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V and 24 V loads

 Advanced braking systems (ABS)

 Automotive systems

 Engine management

 General purpose power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source

voltage

≥ 25 °C; T

≤ 175°C --55V

drain current V

=10V; T

=25°C;

see Figure 1

; see Figure 4

--47.4A

tot

total power

dissipation

= 25 °C; see Figure 2 --85W

Static characteristics

DSon

drain-source

on-state

resistance

=10V; I

=20A;

=25°C; see Figure 12;

see Figure 13

-12.718mΩ

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source

avalanche energy

=47.4A; V

sup

≤ 55 V;

=50Ω; V

=10V;

j(init)

= 25 °C; unclamped

--77mJ

Dynamic characteristics

gate-drain charge I

=20A; V

=44V;

= 10 V; see Figure 14

-8.1-nC

Summary of content (14 pages)

PAGE 1
BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V VDGR drain-gate voltage RGS = 20 kΩ - - 55 V VGS gate-source voltage ID drain current -20 - 20 V Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 4 - - 47.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac513 50 03na19 120 ID (A) 40 Pder (%) 80 30 20 40 10 0 0 0 Fig 1. 50 100 150 Tmb (°C) 0 200 50 100 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aac492 102 IAL (A) (1) 10 (2) 1 (3) 10-1 10-3 Fig 3.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac613 103 I D (A) Limit RDSon = V DS / ID 102 tp = 10 μs 100 μs 10 1 ms 10 ms DC 1 100 ms 10-1 10-2 1 Fig 4. 102 10 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 5. Thermal characteristics Table 5.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 55 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10; see Figure 11 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac945 160 ID (A) 20 5 RDSon (mΩ) 15 120 003aac949 80 5.5 6 6.5 7 8 10 4.5 15 60 10 8 7 80 40 6.5 6 5.5 40 VGS (V) = 20 20 5 VGS (V) = 4.5 0 0 0 Fig 6. 2 4 6 8 10 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values. 0 Fig 7. 003aac950 40 40 80 120 ID (A) 160 Drain-source on-state resistance as a function of drain current; typical values.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03aa32 5 ID (A) VGS(th) (V) 4 typ max 10−3 typ 2 min 10−2 max 3 10−4 min 10−5 1 0 −60 03aa35 10−1 10−6 0 60 120 0 180 2 4 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03nb25 2.4 6 VGS (V) Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aac948 60 RDSON (mΩ) a 1.6 40 0.8 20 0 −60 0 0 60 120 Product data sheet 4 Tj (°C) Fig 12.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac944 10 003aac951 104 VGS (V) C (pF) 8 VDS = 14 V 103 6 Ciss VDS = 44 V Coss 4 2 10 Crss 2 0 0 10 20 QG (nC) 10 10-1 30 Fig 14. Gate-source voltage as a function of gate charge; typical values. 1 10 VDS (V) 102 Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 003aac947 100 IS (A) 80 60 40 Tj = 175 °C 20 Tj = 25 °C 0 0.2 0.4 0.6 0.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 b3 b4 2.2 2.0 0.9 0.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7Y18-55B_4 20100407 Product data sheet - BUK7Y18-55B_3 Modifications: BUK7Y18-55B_3 BUK7Y18-55B Product data sheet • Status changed from objective to product. 20100218 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
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BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . .