Datasheet

1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V, 24 V and 42 V loads
 Automotive systems
 DC-to-DC converters
 Engine management
 General purpose power switching
 Solenoid drivers
 Transmission control
1.4 Quick reference data
BUK7Y53-100B
N-channel TrenchMOS standard level FET
Rev. 3 — 13 October 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
; see Figure 4
--24.8A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --85W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=10A;
T
j
=25°C; see Figure 12;
see Figure 13
- 4053mΩ