DISCRETE SEMICONDUCTORS DATA SHEET BYC5-600 Rectifier diode ultrafast, low switching loss Product specification March 2001
1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC5-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET QUICK REFERENCE DATA VR = 600 V k 1 VF ≤ 1.75 V a 2 IF(AV) = 5 A trr = 19 ns (typ) APPLICATIONS • Active power factor correction • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched mode power supplies.
1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC5-600 ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage IF = 5 A; Tj = 150˚C IF = 10 A; Tj = 150˚C IF = 5 A; VR = 600 V VR = 500 V; Tj = 100 ˚C - 1.4 1.75 2.0 9 0.9 1.75 2.2 2.9 100 3.
1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss 15 Forward dissipation, PF (W) BYC5-600 BYC5-600 Tmb(max) C 112.5 Vo = 1.3 V Rs = 0.09 Ohms Irrm ID D = 1.0 dIF/dt ID = IL 0.5 losses due to diode reverse recovery 125 10 0.2 0.1 time 5 I tp D= T tp 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) VD t T 0 137.5 7 150 8 Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.3.
1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss I dI F BYC5-600 10 F dt Forward current, IF (A) BYC5-600 Tj = 25 C Tj = 150 C 8 t rr 6 typ time max 4 Q I I R 100% 10% s 2 rrm 0 Fig.9. Definition of reverse recovery parameters trr, Irrm 20 Peak forward recovery voltage, Vfr (V) 0 1 2 Forward voltage, VF (V) 3 4 Fig.12. Typical and maximum forward characteristic IF = f(VF); Tj = 25˚C and 150˚C.
1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC5-600 MECHANICAL DATA Dimensions in mm Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220 SOD59 Net Mass: 2 g E A A1 P q D1 D L1 L2(1) Q b1 L 1 2 c b e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1 mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 5.08 15.0 13.5 3.30 2.
NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Legal information NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s).
