Datasheet

Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
R
= 150 V/ 200 V
• Fast switching
• Soft recovery characteristic V
F
≤ 0.85 V
• Reverse surge capability
• High thermal cycling performance I
O(AV)
= 20 A
• Low thermal resistance
I
RRM
= 0.2 A
t
rr
≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
1
3 anode 2 (a)
tab cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV32E / BYV32EB -150 -200
V
RRM
Peaqk repetitive reverse - 150 200 V
voltage
V
RWM
Crest working reverse voltage - 150 200 V
V
R
Continuous reverse voltage - 150 200 V
I
O(AV)
Average rectified output current square wave; δ = 0.5; - 20 A
(both diodes conducting) T
mb
≤ 115 ˚C
I
FRM
Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A
per diode T
mb
≤ 115 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 125 A
current per diode t = 8.3 ms - 137 A
sinusoidal; with reapplied
V
RWM(max)
I
RRM
Repetitive peak reverse current t
p
= 2 µs; δ = 0.001 - 0.2 A
per diode
I
RSM
Non-repetitive peak reverse t
p
= 100 µs - 0.2 A
current per diode
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
1 It is not possible to make connection to pin 2 of the SOT404 package
k
a1
a2
13
2
13
tab
2
123
tab
July 1998 1 Rev 1.200