Datasheet

BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 27 February 2009 Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
 High reverse voltage surge capability
 High thermal cycling performance
 Low thermal resistance
 Soft recovery characteristic minimizes
power consuming oscillations
 Very low on-state loss
1.3 Applications
 Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak
reverse voltage
- - 200 V
I
O(AV)
average output
current
square-wave pulse; δ = 0.5;
T
mb
≤ 115 °C; both diodes
conducting; see Figure 1
;
see Figure 2
--20A
I
RRM
repetitive peak
reverse current
t
p
=2µs; δ =0.001 --0.2A
V
ESD
electrostatic
discharge voltage
HBM; C = 250 pF; R = 1.5
kΩ; all pins
--8kV
Dynamic characteristics
t
rr
reverse recovery
time
I
F
=1A; V
R
=30V;
dI
F
/dt = 100 A/µs;
T
j
= 25 °C; ramp recovery;
see Figure 5
- 2025ns
I
R
=1A; I
F
=0.5A;
T
j
= 25 °C; step recovery;
measured at reverse current
= 0.25 A; see Figure 6
- 1020ns
Static characteristics
V
F
forward voltage I
F
=8A; T
j
=150°C; see
Figure 4
- 0.72 0.85 V