DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BZV49 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 11 2005 Feb 03
NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series FEATURES PINNING • Total power dissipation: max. 1 W PIN DESCRIPTION • Tolerance series: approx. ±5% 1 anode • Working voltage range: nom. 2.4 to 75 V (E24 range) 2 cathode • Non-repetitive peak reverse power dissipation: max. 40 W. 3 anode APPLICATIONS • General regulation functions. 1 3 DESCRIPTION Medium-power voltage regulator diodes in a SOT89 plastic SMD package.
NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN.
DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (μA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C 4 450 50 1.0 6.0 5 450 20 1.0 6.0 0 5 450 10 1.0 6.0 0 5 450 5 1.0 6.0 −2.4 0 5 450 5 1.0 6.0 −3.5 −2.5 0 5 450 3 1.0 6.0 90 −3.5 −2.5 0 5 450 3 1.0 6.0 80 −3.5 −1.4 +0.
TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (μA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C 5 MAX. MAX. VR (V) 2 50 0.05 18.9 1.0 29.4 2 50 0.05 21.0 1.0 33.4 2 45 0.05 23.1 0.9 33.0 37.4 2 45 0.05 25.2 0.8 33.4 36.4 41.2 2 45 0.05 27.3 0.7 37.6 41.2 46.6 2 40 0.05 30.1 0.6 170 42.0 46.1 51.8 2 40 0.05 32.
NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-tp) thermal resistance from junction to tie-point Rth(j-a) thermal resistance from junction to ambient note 1 VALUE UNIT 15 K/W 125 K/W Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series MBG927 1 handbook, full pagewidth 4V3 SZ (mV/K) 3V9 3V6 0 3V3 −1 3V0 −2 2V7 2V4 −3 10-3 10-2 10-1 IZ (A) BZV49-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG924 10 handbook, halfpage SZ (mV/K) 10 9V1 5 8V2 7V5 6V8 6V2 5V6 5V1 0 4V7 −5 0 4 8 12 16 IZ (mA) 20 BZV49-C4V7 to C10. Tj = 25 to 150 °C. Fig.
NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
