DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BZV90 series Voltage regulator diodes Product data sheet Supersedes data of 1996 Oct 25 1999 May 17
NXP Semiconductors Product data sheet Voltage regulator diodes FEATURES BZV90 series PINNING • Total power dissipation: max. 1 500 mW • Tolerance series: approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) PIN 1 2, 4 3 DESCRIPTION anode cathode anode • Non-repetitive peak reverse power dissipation: max. 40 W. 4 handbook, halfpage APPLICATIONS • General regulation functions. 3 1 DESCRIPTION Medium-power voltage regulator diodes in SOT223 plastic SMD packages.
DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (μA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C 3 450 50 1.0 6.0 5 450 20 1.0 6.0 0 5 450 10 1.0 6.0 0 5 450 5 1.0 6.0 −2.4 0 5 450 5 1.0 6.0 −3.5 −2.5 0 5 450 3 1.0 6.0 90 −3.5 −2.5 0 5 450 3 1.0 6.0 80 −3.5 −1.4 0.
TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (μA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C 4 MAX. MAX. VR (V) 5 60 0.05 15.4 1.25 22.0 5 55 0.05 16.8 1.25 25.3 2 50 0.05 18.9 1.0 26.6 29.4 2 50 0.05 21.0 1.0 27.4 29.7 33.4 2 45 0.05 23.1 0.9 30.4 33.0 37.4 2 45 0.05 25.2 0.8 130 33.4 36.4 41.2 2 45 0.05 27.
NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 83.3 K/W lead length max.; note 1 Note 1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2. GRAPHICAL DATA MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 100 10 (2) 1 10−1 1 duration (ms) 0 0.
NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series MBG927 1 handbook, full pagewidth 4V3 SZ (mV/K) 3V9 3V6 0 3V3 −1 3V0 −2 2V7 2V4 −3 10-3 10-2 10-1 IZ (A) BZV90-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG924 10 handbook, halfpage SZ (mV/K) 10 9V1 5 8V2 7V5 6V8 6V2 5V6 5V1 0 4V7 −5 0 4 8 12 16 IZ (mA) 20 BZV90-C4V7 to C10. Tj = 25 to 150 °C. Fig.
NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.
NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
