DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 25 2002 Feb 27
NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series FEATURES • Total power dissipation: max. 500 mW • Two tolerance series: ±2%, and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage k a APPLICATIONS MAM239 • Low voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages.
NXP Semiconductors Product data sheet Voltage regulator diodes SYMBOL IR 2002 Feb 27 BZX79 series PARAMETER CONDITIONS MAX.
DIFFERENTIAL RESISTANCE rdif (Ω) Tol. ±2% (B) Tol. approx. ±5% (C) at IZtest = 1 mA MIN. MIN. TYP. MAX. MAX. MAX. TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 5 and 6) DIODE CAP. NON-REPETITIVE PEAK Cd (pF) REVERSE CURRENT IZSM (A) at f = 1 MHz; VR = 0 V at tp = 100 μs; Tamb = 25 °C at IZtest = 5 mA TYP. MAX. MIN. TYP. MAX. MAX. MAX. 4 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 3V0 2.94 3.
DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 5 and 6) DIODE CAP. NON-REPETITIVE PEAK Cd (pF) REVERSE CURRENT IZSM (A) at f = 1 MHz; VR = 0 V at tp = 100 μs; Tamb = 25 °C 5 Tol. ±2% (B) Tol. approx. ±5% (C) MIN. MAX. MIN. 27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0 30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0 33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9 36 35.30 36.70 34.
NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 8 mm. 300 K/W Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA MBG930 103 handbook, full pagewidth δ=1 Rth j-a 0.75 0.50 0.33 0.
NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Fig.4 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 0.8 1 VF (V) Typical forward current as a function of forward voltage.
NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) G1 UNIT b max. D max. max. L min. mm 0.56 1.85 4.25 25.4 0 1 2 mm scale Note 1. The marking band indicates the cathode.
NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
