Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesMMBZ9V1AL,215

1. Product profile

1.1 General description

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common

anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted

Device (SMD) plastic package. The devices are designed for ESD and transient

overvoltage protection of up to two signal lines.

1.2 Features

1.3 Applications

MMBZxAL series

Low capacitance unidirectional double ESD protection diodes

Rev. 02 — 10 December 2009 Product data sheet

Table 1. Product overview

Type number Package Configuration

NXP JEDEC

MMBZ5V6AL SOT23 TO-236AB dual common anode

MMBZ6V2AL

MMBZ6V8AL

MMBZ9V1AL

MMBZ10VAL

MMBZ12VAL

MMBZ15VAL

MMBZ18VAL

MMBZ20VAL

MMBZ27VAL

MMBZ33VAL

 Unidirectional ESD protection of

two lines

 ESD protection up to 30 kV (contact

discharge)

 Bidirectional ESD protection of one line  IEC 61000-4-2; level 4 (ESD)

 Low diode capacitance: C

≤ 280 pF  IEC 61643-321

 Rated peak pulse power: P

PPM

=40W  AEC-Q101 qualified

 Ultra low leakage current: I

=5nA

 Computers and peripherals  Automotive electronic control units

 Audio and video equipment  Portable electronics

 Cellular handsets and accessories

Summary of content (17 pages)

PAGE 1
MMBZxAL series Low capacitance unidirectional double ESD protection diodes Rev. 02 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. Table 1.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit MMBZ5V6AL - - 3 V MMBZ6V2AL - - 3 V MMBZ6V8AL - - 4.5 V Per diode VRWM Cd reverse standoff voltage MMBZ9V1AL - - 6 V MMBZ10VAL - - 6.5 V MMBZ12VAL - - 8.5 V MMBZ15VAL - - 12 V MMBZ18VAL - - 14.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 3. Ordering information Table 4. Ordering information Type number MMBZ5V6AL Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL 4. Marking Table 5.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit rated peak pulse power tp = 10/1000 μs - 24 W - 40 W MMBZ5V6AL - 3 A MMBZ6V2AL - 2.76 A MMBZ6V8AL - 2.5 A MMBZ9V1AL - 1.7 A MMBZ10VAL - 1.7 A MMBZ12VAL - 2.35 A MMBZ15VAL - 1.9 A MMBZ18VAL - 1.6 A MMBZ20VAL - 1.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] In accordance with IEC 61643-321 (10/1000 μs current waveform). [2] Measured from pin 1 or 2 to pin 3.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 001aaa631 IPP 006aab319 150 100 % 90 % IPP (%) 100 % IPP; 10 μs 100 50 % IPP; 1000 μs 50 10 % 0 1.0 2.0 3.0 30 ns 4.0 tp (ms) Fig 1. t tr = 0.7 ns to 1 ns 0 10/1000 μs pulse waveform according to IEC 61643-321 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 6. Thermal characteristics Table 9.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 7. Characteristics Table 10. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 10 mA - - 0.9 V VRWM reverse standoff voltage MMBZ5V6AL - - 3 V MMBZ6V2AL - - 3 V Per diode IRM VBR MMBZ6V8AL - - 4.5 V MMBZ9V1AL - - 6 V MMBZ10VAL - - 6.5 V MMBZ12VAL - - 8.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes Table 10. Characteristics …continued Tamb = 25 °C unless otherwise specified.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 006aab320 103 006aab321 1.2 PPPM PPPM (W) PPPM(25°C) 102 0.8 10 0.4 1 10−2 10−1 1 102 10 0 103 tp (ms) 0 50 100 150 200 Tj (°C) Tamb = 25 °C unidirectional and bidirectional Fig 3. Rated peak pulse power as a function of exponential pulse duration (rectangular waveform); typical values 006aab839 250 Cd (pF) Fig 4.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes IRM (nA) 006aab841 103 (1) 102 10 (2) 1 (3) 10−1 10−2 (4) 10−3 10−4 −75 −25 25 75 125 175 Tamb (°C) (1) MMBZ5V6AL: VRWM = 3 V (2) MMBZ6V8AL: VRWM = 4.5 V (3) MMBZ9V1AL: VRWM = 6 V (4) MMBZ27VAL: VRWM = 22 V Fig 7. Reverse leakage current as a function of ambient temperature; typical values I IPPM IPP −VCL −VBR −VRWM V −IRM −IR − −VCL −VBR −VRWM IR IRM −IRM −IR + P-N − −IPP −IPPM Fig 8.
PAGE 12
MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 8. Application information The MMBZxAL series is designed for the protection of up to two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 10. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 11. Package outline SOT23 (TO-236AB) 11. Packing information Table 11. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 12. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 12. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 13.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 13. Revision history Table 12.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . .