Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsNX3008NBKMB,315, MOSFET

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Low threshold voltage

 Trench MOSFET technology

 ESD protection up to 2 kV

 Ultra thin package profile with

0.37 mm height

1.3 Applications

 Relay driver

 High-speed line driver

 Low-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm

NX3008NBKMB

30 V, single N-channel Trench MOSFET

Rev. 1 — 11 May 2012 Product data sheet

SOT883B

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

=25°C --30V

gate-source voltage -8 - 8 V

drain current V

=4.5V; T

amb

=25°C

[1]

- - 530 mA

Static characteristics

DSon

drain-source on-state

resistance

=4.5V; I

= 350 mA; T

=25°C - 1 1.4 Ω

Summary of content (15 pages)

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83B NX3008NBKMB SO T8 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  ESD protection up to 2 kV  Low threshold voltage  Ultra thin package profile with 0.37 mm height  Trench MOSFET technology 1.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 S source 1 3 D drain 2 Graphic symbol D 3 Transparent top view G SOT883B (DFN1006B-3) S 017aaa255 3. Ordering information Table 3. Ordering information Type number NX3008NBKMB Package Name Description Version DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = 4.5 V; Tamb = 25 °C - 530 mA VGS = 4.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET aaa-002631 10 ID (A) limit RDSon = VDS / ID 1 (1) 10-1 (2) (3) (4) (5) 10-2 10-1 1 10 102 VDS (V) IDM is single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa109 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa110 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.33 0.2 0.1 0 10 10−3 0.05 0.02 0.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.6 0.9 1.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 001aao267 0.4 ID (A) 2.5 V 001aao268 10-3 4.5 V ID (A) 2V 0.3 (2) (1) (3) 10-4 1.75 V 0.2 10-5 1.5 V 0.1 VGS = 1.25 V 0.0 0 1 2 3 VDS (V) 10-6 0.0 4 Tj = 25 °C 0.5 1.0 VGS (V) 1.5 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 7. Output characteristics: drain current as a function of drain-source voltage; typical values 001aao269 6 Fig 8.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 001aao271 0.4 ID (A) a (1) (2) 0.3 1.5 0.2 1.0 0.1 0.5 0.0 001aao272 2.0 0 1 2 VGS (V) 0.0 -60 3 0 60 120 Tj (˚C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao273 1.5 Fig 12.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 001aao275 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0.0 0.2 0.4 QG (nC) 0.6 ID = 0.4 A; VDS = 15 V; Tamb = 25 °C Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Gate charge waveform definitions 001aao276 0.4 IS (A) 0.3 (1) (2) 0.2 0.1 0.0 0.0 0.4 0.6 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 17.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 18. Duty cycle definition 9. Package outline 0.65 0.55 0.40 0.34 0.35 1 2 0.20 0.12 0.04 max 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 19. Package outline SOT883B (DFN1006B-3) NX3008NBKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 May 2012 © NXP B.V. 2012.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3) NX3008NBKMB Product data sheet All information provided in this document is subject to legal disclaimers.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3008NBKMB v.1 20120511 Product data sheet - - NX3008NBKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 May 2012 © NXP B.V. 2012. All rights reserved.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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NX3008NBKMB NXP Semiconductors 30 V, single N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . .