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1. Product profile

1.1 General description

PNP high-voltage low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a medium

power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 High voltage

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 AEC-Q101 qualified

 Medium power SMD plastic package

1.3 Applications

 Electronic ballasts

 LED driver for LED chain module

 LCD backlighting

 Automotive motor management

 Flyback converters

 Hook switch for wired telecom

 Switch Mode Power Supply (SMPS)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBHV9050Z

500 V, 250 mA PNP high-voltage low V

CEsat

(BISS) transistor

Rev. 1 — 19 August 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CESM

collector-emitter peak

voltage

=0 - - −500 V

CEO

collector-emitter voltage open base - - −500 V

collector current - - −0.25 A

DC current gain V

= −10 V;

= −50 mA

[1]

80 160 300

Summary of content (13 pages)

PAGE 1
PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 1 — 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 1.
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PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 collector 3 emitter 4 collector Simplified outline Graphic symbol 4 2, 4 1 1 2 3 3 sym028 3. Ordering information Table 3. Ordering information Type number PBHV9050Z Package Name Description Version SC-73 plastic surface-mounted package with increased heat sink; 4 leads SOT223 4. Marking Table 4.
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PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 006aab156 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab157 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.
PAGE 5
PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 6
PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 006aab692 240 IB (mA) = −200 IC (A) (1) hFE 006aab693 −0.5 −180 −0.4 −160 180 −120 (2) −0.3 −140 −100 −80 120 −60 −40 −0.2 (3) −20 60 −0.1 0 −10−1 −1 −10 −102 IC (mA) 0.0 −103 0 VCE = −10 V −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. DC current gain as a function of collector current; typical values 006aab694 −1.
PAGE 7
PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 006aab696 −1 VCEsat (V) 006aab697 −1 VCEsat (V) (1) −10−1 (2) −10−1 (1) (3) (2) (3) −10−2 −10−1 −1 −10 −102 IC (mA) −103 −10−2 −10−1 −10 −102 IC (mA) −103 Tamb = 25 °C IC/IB = 5 (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = −55 °C (3) IC/IB = 5 Fig 8.
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PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 8. Test information VBB RB oscilloscope VCC RC Vo (probe) (probe) 450 Ω oscilloscope 450 Ω R2 VI DUT R1 mgd624 Fig 12. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9.
PAGE 9
PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 14. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.
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PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBHV9050Z v.1 20100819 Product data sheet - - PBHV9050Z Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 August 2010 © NXP B.V. 2010. All rights reserved.
PAGE 11
PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 12
PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14.
PAGE 13
PBHV9050Z NXP Semiconductors 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .