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1. Product profile

1.1 General description

PNP high-voltage low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a medium

power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBHV8215Z.

1.2 Features

 High voltage

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 AEC-Q101 qualified

 Medium power SMD plastic package

1.3 Applications

 LED driver for LED chain module

 LCD backlighting

 Automotive motor management

 Switch Mode Power Supply (SMPS)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBHV9215Z

150 V, 2 A PNP high-voltage low V

CEsat

(BISS) transistor

Rev. 01 — 11 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −150 V

collector current - - −2A

DC current gain V

= −10 V;

= −100 mA

[1]

100 180 -

Summary of content (12 pages)

PAGE 1
PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8215Z. 1.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 collector 3 emitter 4 collector Simplified outline Graphic symbol 4 2, 4 1 1 2 3 3 sym028 3. Ordering information Table 3. Ordering information Type number PBHV9215Z Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 4. Marking Table 4.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Min Typ Max Unit [1] - - 170 K/W [2] - - 85 K/W - - 15 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 006aab855 300 IB (mA) = −360 IC (A) (1) hFE 006aab856 −4.0 −3.2 200 (2) −288 −252 −216 −180 −144 −2.4 −324 −108 −72 −36 −1.6 (3) 100 −0.8 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 VCE = −10 V −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. DC current gain as a function of collector current; typical values 006aab857 −1.2 VBE (V) Fig 5.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 006aab859 −1 006aab860 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (2) (1) (1) (3) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 5 (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = −55 °C (3) IC/IB = 5 Fig 8.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 8. Test information VBB RB oscilloscope VCC RC Vo (probe) (probe) 450 Ω oscilloscope 450 Ω R2 VI DUT R1 mgd624 Fig 12. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 14. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBHV9215Z_1 20091211 Product data sheet - - PBHV9215Z_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . .