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1. Product proﬁle

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in one package.

1.2 Features

n Low V

CEsat

(BISS) and resistor-equipped transistor in one package

n Low threshold voltage (<1 V) compared to MOSFET

n Low drive power required

n Space-saving solution

n Reduction of component count

1.3 Applications

n Supply line switches

n Battery charger switches

n High-side switches for LEDs, drivers and backlights

n Portable equipment

1.4 Quick reference data

PBLS4003Y; PBLS4003V

40 V PNP BISS loadswitch

Rev. 03 — 13 February 2009 Product data sheet

Table 1. Product overview

Type number Package

NXP JEITA

PBLS4003Y SOT363 SC-88

PBLS4003V SOT666 -

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low V

CEsat

transistor

CEO

collector-emitter voltage open base - - −40 V

collector current - - −500 mA

CEsat

collector-emitter saturation

resistance

= −500 mA;

= −50 mA

[1]

- 440 700 mΩ

TR2; NPN resistor-equipped transistor

CEO

collector-emitter voltage open base - - 50 V

Summary of content (11 pages)

PAGE 1
PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 03 — 13 February 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1. Product overview Type number Package NXP JEITA PBLS4003Y SOT363 SC-88 PBLS4003V SOT666 - 1.
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PBLS4003Y; PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch Table 2. Quick reference data …continued Symbol Parameter Min Typ Max Unit IO output current - - 100 mA R1 bias resistor 1 (input) 7 10 13 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 [1] Conditions Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. Pinning information Table 3.
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PBLS4003Y; PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBLS4003Y; PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
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PBLS4003Y; PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch 006aaa388 600 IB (mA) = −30 IC −27 (A) −24 −21 −0.8 −18 (1) hFE 400 006aaa394 −1 −15 −12 −9 (2) −0.6 −6 200 −3 −0.4 (3) −0.2 0 −10−1 −1 −10 −102 0 −103 0 −1 −2 −3 IC (mA) VCE = −2 V −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. TR1 (PNP): DC current gain as a function of collector current; typical values 006aaa389 −1.1 VBE (V) −0.9 Fig 2.
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PBLS4003Y; PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch 006aaa390 −1 006aaa391 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (1) (2) (3) (2) (3) −10−2 −10−1 −1 −10 −102 −103 IC (mA) −10−2 −10−1 −10 −102 −103 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 5. −1 TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa393 103 Fig 6.
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PBLS4003Y; PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch 006aaa034 103 (1) (2) (3) hFE 006aaa035 1 VCEsat (V) 102 (1) (2) (3) 10−1 10 1 10−1 1 102 10 10−2 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 9. TR2 (NPN): DC current gain as a function of collector current; typical values 006aaa036 10 102 10 IC (mA) Fig 10.
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PBLS4003Y; PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch 8. Package outline 2.2 1.8 6 1.1 0.8 5 1.7 1.5 0.45 0.15 4 6 0.6 0.5 5 4 0.3 0.1 2.2 1.35 2.0 1.15 1.7 1.5 pin 1 index 1 1.3 1.1 pin 1 index 2 3 1 0.3 0.2 0.65 0.25 0.10 2 3 0.18 0.08 0.27 0.17 0.5 1.3 1 Dimensions in mm 06-03-16 Fig 13. Package outline SOT363 (SC-88) Dimensions in mm 04-11-08 Fig 14. Package outline SOT666 9. Packing information Table 9.
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PBLS4003Y; PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch 10. Revision history Table 10. Revision history Document ID Release date PBLS4003Y_PBLS4003V_3 20090213 Modifications: Data sheet status Change notice Supersedes Product data sheet - PBLS4003Y_PBLS4003V_2 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • Legal texts have been adapted to the new company name where appropriate.
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PBLS4003Y; PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . .