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1. Product proﬁle

1.1 General description

NPN low V

CEsat

Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)

Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS301PD.

1.2 Features

n Very low collector-emitter saturation resistance

n Ultra low collector-emitter saturation voltage

n 4 A continuous collector current

n Up to 15 A peak current

n High efﬁciency due to less heat generation

1.3 Applications

n Power management functions

n Charging circuits

n DC-to-DC conversion

n MOSFET gate driving

n Power switches (e.g. motors, fans)

n Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al

, standard footprint.

[2] Pulse test: t

≤ 300 µs; δ≤0.02.

PBSS301ND

20 V, 4 A NPN low V

CEsat

(BISS) transistor

Rev. 03 — 7 September 2007 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 20 V

collector current

[1]

--4A

peak collector current single pulse;

≤ 1ms

--15A

CEsat

collector-emitter saturation

resistance

=4A;

= 400 mA

[2]

- 5070mΩ

Summary of content (14 pages)

PAGE 1
PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 03 — 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PD. 1.
PAGE 2
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector Simplified outline 6 5 Symbol 4 1, 2, 5, 6 3 1 2 3 4 sym014 3. Ordering information Table 3. Ordering information Type number PBSS301ND Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4.
PAGE 3
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PAGE 4
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Min Typ Max Unit [2] - - 350 K/W [3] - - 208 K/W [4] - - 167 K/W [1] - - 113 K/W [2][5] - - 50 K/W - - 45 K/W [1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PAGE 5
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 006aaa272 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa273 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.
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PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 20 V; IE = 0 A - - 0.1 µA VCB = 20 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off VCE = 20 V; VBE = 0 V current - - 0.1 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 0.
PAGE 7
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 006aaa328 1000 hFE 006aaa334 10 IB (mA) = 80 72 64 56 48 40 IC (A) 8 800 (1) 32 6 600 24 (2) 16 400 4 8 (3) 2 200 0 10−1 1 10 102 103 104 105 IC (mA) 0 0 0.4 0.8 1.2 1.6 2.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa329 1.4 VBE (V) 1.2 Fig 6.
PAGE 8
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 006aaa330 10 006aaa331 10 VCEsat (V) VCEsat (V) 1.0 1 (1) 10−1 10−1 (2) (3) (1) 10−2 (2) 10−2 (3) 10−3 10−1 1 10 102 103 104 105 IC (mA) 10−3 10−1 1 10 102 103 104 105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9.
PAGE 9
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = −0.15 A Fig 14.
PAGE 10
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 16. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 17. Wave soldering footprint SOT457 (SC-74) PBSS301ND_3 Product data sheet © NXP B.V. 2007. All rights reserved.
PAGE 12
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS301ND_3 20070907 Product data sheet - PBSS301ND_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 1.
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PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 14
PBSS301ND NXP Semiconductors 20 V, 4 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .