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1. Product profile

1.1 General description

NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)

small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS305PZ.

1.2 Features

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 High efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 High-voltage DC-to-DC conversion

 High-voltage MOSFET gate driving

 High-voltage motor control

 High-voltage power switches (e.g. motors, fans)

 Automotive applications

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS305NZ

80 V, 5.1 A NPN low V

CEsat

(BISS) transistor

Rev. 02 — 8 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 80 V

collector current - - 5.1 A

peak collector current single pulse;

≤ 1ms

--10.2A

CEsat

collector-emitter saturation

resistance

=4A;

=200mA

[1]

- 4056mΩ

Summary of content (14 pages)

PAGE 1
PBSS305NZ 80 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 — 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PZ. 1.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 collector 3 emitter 4 collector Simplified outline Symbol 4 2, 4 1 1 2 3 3 sym016 3. Ordering information Table 3. Ordering information Type number PBSS305NZ Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; SOT223 4 leads 4. Marking Table 4.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 80 V VEBO emitter-base voltage open collector - 5 V IC collector current - 5.1 A ICM peak collector current single pulse; tp ≤ 1 ms - 10.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 179 K/W [2] - - 74 K/W [3] - - 63 K/W - - 15 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 006aaa562 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.20 10 0.33 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa563 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.20 0.33 10 0.10 0.05 0.02 1 0.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 80 V; IE = 0 A - - 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C - - 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 2 V; IC = 0.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 006aaa621 1000 hFE 006aaa627 14 IC (A) 12 IB (mA) = 300 800 270 180 150 120 90 (1) 600 240 210 10 8 (2) 60 6 400 30 (3) 4 200 2 0 10−1 1 10 102 0 103 104 IC (mA) 0 1 2 3 4 5 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. 006aaa622 1.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 006aaa623 1 006aaa624 1 VCEsat (V) VCEsat (V) 10−1 10−1 (1) (1) (2) (3) (2) 10−2 (3) 10−2 10−3 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C 006aaa626 103 Fig 10.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = −0.15 A Fig 14.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 2.3 4.6 3 0.8 0.6 Dimensions in mm 0.32 0.22 04-11-10 Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 16. Reflow soldering footprint 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 17.
PAGE 12
PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS305NZ_2 20091208 Product data sheet - PBSS305NZ_1 Modifications: PBSS305NZ_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
PAGE 13
PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS305NZ NXP Semiconductors 80 V, 5.1 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .