Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsBJTs & IGBTsTransistor

1. Product proﬁle

1.1 General description

NPN/NPN double low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a medium

power Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Low collector-emitter saturation voltage V

CEsat

n High collector current capability I

and I

n High collector current gain (h

) at high I

n High efﬁciency due to less heat generation

n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

n Dual low power switches (e.g. motors, fans)

n Automotive

1.4 Quick reference data

[1] Pulse test: t

≤ 300 µs; δ≤0.02.

PBSS4350SS

50 V, 2.7 A NPN/NPN low V

CEsat

(BISS) transistor

Rev. 01 — 3 April 2007 Product data sheet

Table 1. Product overview

Type number Package NPN/PNP

complement

PNP/PNP

complement

NXP Name

PBSS4350SS SOT96-1 SO8 PBSS4350SPN PBSS5350SS

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - 50 V

collector current - - 2.7 A

peak collector current single pulse;

≤ 1ms

--5 A

CEsat

collector-emitter

saturation resistance

=2A;

= 200 mA

[1]

- 90 130 mΩ

Summary of content (14 pages)

PAGE 1
PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PBSS4350SS Package NXP Name NPN/PNP complement SOT96-1 SO8 PBSS4350SPN PNP/PNP complement PBSS5350SS 1.
PAGE 2
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 emitter TR2 4 base TR2 5 collector TR2 6 collector TR2 7 collector TR1 8 collector TR1 Simplified outline 8 Symbol 8 5 7 TR1 1 4 1 6 5 TR2 2 3 4 006aaa966 3. Ordering information Table 4.
PAGE 3
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 0.75 W [2] - 1.
PAGE 4
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 7.
PAGE 5
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 006aaa810 103 duty cycle = Zth(j-a) (K/W) 1.0 0.75 0.5 0.33 0.2 102 0.1 10 0.05 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa811 103 Zth(j-a) (K/W) duty cycle = 102 1.0 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.
PAGE 6
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 7
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 006aaa968 1000 006aaa969 5 hFE IB (mA) = 100 IC (A) (1) 800 80 4 (2) 600 90 60 70 50 40 30 3 20 10 400 2 (3) 200 0 10−1 1 1 10 102 103 104 IC (mA) 0 0 0.4 0.8 1.2 1.6 2.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa970 1.2 Fig 6.
PAGE 8
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 006aaa972 1 006aaa973 1 VCEsat (V) VCEsat (V) 10−1 10−1 (1) (2) (3) (1) (2) 10−2 10−2 (3) 10−3 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa974 103 103 104 IC (mA) Fig 10.
PAGE 9
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 10 V; IC = 2 A; IBon = 100 mA; IBoff = −100 mA Fig 14.
PAGE 10
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 9. Package outline 5.0 4.8 1.75 1.0 0.4 6.2 5.8 4.0 3.8 pin 1 index 1.27 0.49 0.36 Dimensions in mm 0.25 0.19 03-02-18 Fig 15. Package outline SOT96-1 (SO8) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 11. Soldering 5.50 0.60 (8×) 1.30 4.00 6.60 7.00 1.27 (6×) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr Fig 16. Reflow soldering footprint SOT96-1 (SO8) 1.20 (2×) 0.60 (6×) enlarged solder land 0.3 (2×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 board direction solder lands occupied area solder resist placement accurracy ± 0.25 Dimensions in mm sot096-1_fw Fig 17.
PAGE 12
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4350SS_1 20070403 Product data sheet - - PBSS4350SS_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
PAGE 13
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 14
PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .