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DATA SHEET

Product data sheet

Supersedes data of 2002 Aug 08

2004 Jan 09

DISCRETE SEMICONDUCTORS

PBSS4350T

50 V; 3 A NPN low V

CEsat

(BISS) transistor

Summary of content (10 pages)

PAGE 1
DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan 09
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NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat SYMBOL • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. PARAMETER MAX.
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NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
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NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. TYP. MAX.
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NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor MLD867 1000 PBSS4350T MLD868 1200 handbook, halfpage handbook, halfpage hFE VBE (mV) 800 (1) 800 (1) 600 (2) (2) 400 (3) 400 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
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NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor MLD871 103 handbook, halfpage PBSS4350T MLD872 103 handbook, halfpage VCEsat VCEsat (mV) (mV) (1) (2) 102 102 (3) (1) (2) 10 10 (3) 1 10−1 1 10 102 1 10−1 103 104 IC (mA) 1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.
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NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor MLD875 103 handbook, halfpage RCEsat (Ω) 102 10 1 (1) 10−1 10−2 −1 10 (2) 1 10 102 (3) 103 104 IC (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Equivalent on-resistance as a function of collector current; typical values.
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NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
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NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.