DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X FEATURES QUICK REFERENCE DATA • SOT89 (SC-62) package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage 50 V IC collector current (DC) 3 A • Higher efficiency leading to less heat generation ICM peak collector current 5 A • Reduced printed-circuit board requirements.
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4350X SC-62 DESCRIPTION VERSION plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X MLE186 2 handbook, halfpage Ptot (W) (1) 1.6 (2) 1.2 (3) 0.8 (4) 0.4 0 0 40 (1) Ceramic PCB; 7 cm2 mounting pad for collector. (2) FR4 PCB; 6 cm2 copper mounting pad for collector. 80 120 160 Tamb (°C) (3) FR4 PCB; 1 cm2 copper mounting pad for collector. (4) Standard footprint. Fig.2 Power derating curves.
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT note 1 225 K/W note 2 125 K/W note 3 90 K/W note 4 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2.
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X 006aaa244 103 Zth (K/W) 102 (1) (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X MLE181 800 MLE180 1.2 handbook, halfpage handbook, halfpage hFE VBE (1) (V) 600 (1) 0.8 (2) (2) 400 (3) (3) 0.4 200 0 10−1 1 102 10 0 10−1 103 104 IC (mA) 1 VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values.
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X MLE185 1.4 MLE182 103 handbook, halfpage handbook, halfpage RCEsat (Ω) VBEsat 102 (V) 1 (1) 10 (2) 1 (3) 0.6 (1) 10−1 0.2 10−1 1 10 102 (2) 10−2 −1 10 103 104 IC (mA) IC/IB = 20. 1 102 10 (3) 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. (1) Tamb = 150 °C. Fig.
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date.
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