DISCRETE SEMICONDUCTORS DATA SHEET age M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Mar 27 2001 Jul 20
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage −40 V ICM peak collector current −2 A RCEsat equivalent on-resistance <500 mΩ • Improved device reliability due to reduced heat generation • Enhanced performance over SOT23 1A standard packaged transistor. PARAMETER MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U MLD543 1200 MLD544 −10 handbook, halfpage handbook, halfpage hFE VBE (V) (1) 800 −1 (1) (2) (2) 400 (3) (3) 0 −10−1 −1 −10 −102 −10−1 −10−1 −103 −104 IC (mA) −1 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U MLD678 300 handbook, halfpage fT (MHz) 200 100 0 −200 0 −400 −600 −800 −1000 IC (mA) VCE = −10 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Transition frequency as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
