DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jun 17 2004 Nov 04
NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X FEATURES QUICK REFERENCE DATA • SOT89 (SC-62) package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage −50 V IC collector current (DC) −2 A • Higher efficiency leading to less heat generation ICM peak collector current −5 A • Reduced printed-circuit board requirements.
NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5250X SC-62 DESCRIPTION VERSION plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT note 1 225 K/W note 2 125 K/W note 3 90 K/W note 4 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2.
NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X 006aaa244 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 006aaa245 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 1 0.
NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. MAX. UNIT VCB = −50 V; IE = 0 A − −100 nA VCB = −50 V; IE = 0 A; Tj = 150 °C − −50 μA ICES collector-emitter cut-off current VCE = −50 V; VBE = 0 V − −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − −100 nA hFE DC current gain VCE = −2 V IC = −0.
NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
