Datasheet

PCF2127AT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 6 — 11 July 2013 66 of 86
NXP Semiconductors
PCF2127AT
Integrated RTC, TCXO and quartz crystal
13. Static characteristics
Table 62. Static characteristics
V
DD
= 1.8 V to 4.2 V; V
SS
=0V; T
amb
= 40 C to +85 C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Supplies
V
DD
supply voltage
[1]
1.8 - 4.2 V
V
BAT
battery supply voltage 1.8 - 4.2 V
V
DD(cal)
calibration supply voltage - 3.3 - V
V
low
low voltage - 1.2 - V
I
DD
supply current interface active;
supplied by V
DD
SPI-bus (f
SCL
= 6.5 MHz) - - 800 A
I
2
C-bus (f
SCL
= 400 kHz) - - 200 A
interface inactive (f
SCL
=0Hz)
[2]
;
TCR[1:0] = 00 (see Table 9 on page 13)
PWRMNG[2:0] = 111 (see Table 18 on page 18
);
TSOFF = 1 (see Table 46 on page 44);
COF[2:0] = 111 (see Table 11 on page 14
)
V
DD
= 2.0 V - 500 - nA
V
DD
= 3.3 V - 700 1500 nA
V
DD
= 4.2 V - 800 - nA
PWRMNG[2:0] = 111 (see Table 18 on page 18
);
TSOFF = 1 (see Table 46 on page 44);
COF[2:0] = 000 (see Table 11 on page 14
)
V
DD
= 2.0 V - 600 - nA
V
DD
= 3.3 V - 850 - nA
V
DD
=4.2V - 1050 - nA
PWRMNG[2:0] = 000 (see Table 18 on page 18
);
TSOFF = 0 (see Table 46 on page 44
);
COF[2:0] = 111 (see Table 11 on page 14)
V
DD
or V
BAT
=2.0V
[3]
-1800-nA
V
DD
or V
BAT
=3.3V
[3]
-2150-nA
V
DD
or V
BAT
=4.2V
[3]
- 2350 3500 nA
PWRMNG[2:0] = 000 (see Table 18 on page 18
);
TSOFF = 0 (see Table 46 on page 44
);
COF[2:0] = 000 (see Table 11 on page 14
)
V
DD
or V
BAT
=2.0V
[3]
-1900-nA
V
DD
or V
BAT
=3.3V
[3]
-2300-nA
V
DD
or V
BAT
=4.2V
[3]
-2600-nA
I
L(bat)
battery leakage current V
DD
is active supply;
V
BAT
= 3.0 V
- 50 100 nA