Datasheet

PCF2129 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 7 — 19 December 2014 60 of 86
NXP Semiconductors
PCF2129
Accurate RTC with integrated quartz crystal for industrial applications
[1] For reliable oscillator start-up at power-on: V
DD(po)min
=V
DD(min)
+0.3V.
[2] Timer source clock =
1
⁄
60
Hz, level of pins SDA/CE, SDI, and SCL is V
DD
or V
SS
.
[3] When the device is supplied by the V
BAT
pin instead of the V
DD
pin, the current values for I
BAT
are as specified for I
DD
under the same
conditions.
[4] The I
2
C-bus and SPI-bus interfaces of PCF2129 are 5 V tolerant.
[5] Tested on sample basis.
[6] For further information, see Figure 40
.
Power management
V
th(sw)bat
battery switch threshold
voltage
-2.5-V
V
th(bat)low
low battery threshold
voltage
-2.5-V
T
amb
=25C 2.25 - 2.85 V
Inputs
[4]
V
I
input voltage 0.5 - V
DD
+0.5 V
V
IL
LOW-level input voltage - - 0.25V
DD
V
T
amb
= 20 C to +85 C;
V
DD
> 2.0 V
- - 0.3V
DD
V
V
IH
HIGH-level input voltage 0.7V
DD
--V
I
LI
input leakage current V
I
=V
DD
or V
SS
-0-A
post ESD event 1- +1A
C
i
input capacitance
[5]
--7pF
Outputs
V
O
output voltage on pins CLKOUT, INT,
referring to external pull-up
0.5 - +5.5 V
on pin BBS 1.8 - 4.2 V
on pin SDO 0.5 - V
DD
+ 0.5 V
V
OH
HIGH output voltage on pin SDO 0.8V
DD
-V
DD
V
V
OL
LOW output voltage on pins CLKOUT, INT, and
SDO
V
SS
-0.2V
DD
V
I
OL
LOW-level output current output sink current;
V
OL
= 0.4 V
on pin SDA/CE
[6]
317- mA
on all other outputs 1.0 - - mA
I
OH
HIGH-level output current output source current;
on pin SDO;
V
OH
= 3.8 V;
V
DD
= 4.2 V
1.0 - - mA
I
LO
output leakage current V
O
= V
DD
or V
SS
-0-A
post ESD event 1- +1A
Table 79. Static characteristics
…continued
V
DD
= 1.8 V to 4.2 V; V
SS
=0V; T
amb
=  40  C to +85  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit