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1. Product profile

1.1 General description

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB)

Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTD123ET.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PDTB123ET

PNP 500 mA, 50 V resistor-equipped transistor;

R1 = 2.2 kΩ, R2 = 2.2 kΩ

Rev. 3 — 22 September 2010 Product data sheet

 500 mA output current capability  Reduces pick and place costs

 Built-in bias resistors  ±10 % resistor ratio tolerance

 Simplifies circuit design  AEC-Q101 qualified

 Reduces component count

 Digital application in automotive and

industrial segments

 Cost-saving alternative for BC807 series

in digital applications

 Control of IC inputs  Switching loads

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −50 V

output current - - −500 mA

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 0.9 1.0 1.1

Summary of content (10 pages)

PAGE 1
PDTB123ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 3 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123ET. 1.
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PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2. Pinning information Table 2. Pinning Pin Description 1 input (base) 2 GND (emitter) 3 Simplified outline Graphic symbol 3 3 R1 output (collector) 1 R2 1 2 2 006aaa144 sym003 3. Ordering information Table 3. Ordering information Type number PDTB123ET Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
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PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 006aaa353 103 006aaa354 −10−1 (1) hFE (2) (3) VCEsat (V) 102 (1) (2) (3) 10 1 10−1 −10−1 −1 −10 −102 IC (mA) −103 −10−2 VCE = −5 V −1 −10 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C DC current gain as a function of collector current; typical values 006aaa355 −10 VI(on) (V) Fig 2.
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PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm Fig 5. 0.15 0.
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PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 Fig 6. sot023_fr Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 Fig 7.
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PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTB123ET v.3 20100922 Product data sheet - PDTB123E_SER_2 Modifications: • • • • • Type numbers PDTB123EK and PDTB123ES deleted. Table 7 “Characteristics”: unit for VCEsat changed from mV to V. Section 8 “Test information”: added. Section 11 “Soldering”: added.
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PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14.
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PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . .