DISCRETE SEMICONDUCTORS DATA SHEET PDZ-B series Voltage regulator diodes Product data sheet Supersedes data of 2002 Feb 18 2004 Mar 22
NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series FEATURES PINNING • Total power dissipation: max. 400 mW ;; PIN • Small plastic package suitable for surface mounted design 1 2 • Wide variety of voltage ranges: nominal 2.4 to 36 V (E24 range) • Tolerance approximately ±2%. handbook, halfpage • General voltage regulation. cathode anode 1 APPLICATIONS DESCRIPTION 2 Top view MAM387 The marking bar indicates the cathode. DESCRIPTION Fig.
NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. − IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tamb = 25 °C prior to surge Ptot total power dissipation Tamb = 25 °C; note 1; see Fig.
NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series CHARACTERISTICS Table 1 Total series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current PDZ2.4B PDZ2.7B PDZ3.0B PDZ3.3B PDZ3.6B PDZ3.9B PDZ4.3B PDZ4.7B PDZ5.1B PDZ5.6B PDZ6.2B PDZ6.8B PDZ7.5B PDZ8.2B PDZ9.1B PDZ10B PDZ11B PDZ12B PDZ13B PDZ15B PDZ16B PDZ18B PDZ20B PDZ22B PDZ24B PDZ27B PDZ30B PDZ33B PDZ36B 2004 Mar 22 CONDITIONS 4 MAX. UNIT IF = 10 mA; see Fig.
TEMP. COEFF. SZ (mV/K) at IZ = 5 mA (see Figs 4 and 5) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C MAX. MAX. at IZ (mA) MAX. at IZ (mA) TYP. MAX. MAX. 2.43 2.69 2.85 3.32 3.60 3.89 4.17 4.55 4.96 5.48 6.06 6.65 7.28 8.02 8.85 9.77 10.78 11.74 12.91 14.34 15.85 17.56 19.52 21.54 23.72 26.19 29.19 32.15 35.07 2.63 2.91 3.07 3.53 3.85 4.16 4.48 4.75 5.20 5.73 6.33 6.93 7.60 8.36 9.23 10.21 11.22 12.24 13.49 14.98 16.51 18.
NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series GRAPHICAL DATA MBK245 500 MBG781 300 handbook, halfpage handbook, halfpage Ptot (mW) IF (mA) 400 200 300 200 100 100 0 0.6 0 0 50 100 150 200 Tamb (°C) 0.8 1 VF (V) Tj = 25 °C. Fig.3 Forward current as a function of forward voltage; typical values. Fig.2 Power derating curve. MGL273 MGL274 0 10 handbook, halfpage handbook, halfpage 12 SZ (mV/K) SZ (mV/K) 4.3 11 10 −1 9.1 5 3.9 8.2 7.5 6.
NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1.
NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
