Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesPESD5V0L1USF,315

1. Product profile

1.1 General description

Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode designed

to protect one signal line from the damage caused by ESD and other transients. The

device is encapsulated in a leadless super small DSN0603-2 (SOD962) Surface-Mounted

Device (SMD) package.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PESD5V0L1USF

Low capacitance unidirectional ESD protection diode

Rev. 1 — 12 July 2012 Product data sheet

 ESD protection of one line  ESD protection up to 30 kV

 Low diode capacitance C

=12pF  IEC 61000-4-2; level 4 (ESD)

 Super small SMD package  IEC 61643-321 (surge); I

PPM

=1.2A

 Ultra low leakage current I

<1nA

 Computers and peripherals  Communication systems

 Audio and video equipment  Portable electronics

 Cellular handsets and accessories

Table 1. Quick reference data

amb

=25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

RWM

reverse standoff voltage - - 5 V

diode capacitance f = 1 MHz; V

= 0 V 9 12 15 pF

Summary of content (13 pages)

PAGE 1
PESD5V0L1USF Low capacitance unidirectional ESD protection diode Rev. 1 — 12 July 2012 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is encapsulated in a leadless super small DSN0603-2 (SOD962) Surface-Mounted Device (SMD) package. 1.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 2 1 2 006aaa152 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package PESD5V0L1USF Name Description Version DSN0603-2 leadless ultra small package; 2 terminals; body 0.6  0.3  0.3 mm SOD962 4.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions rated peak pulse power tp = 8/20 s [1][2] IPPM rated peak pulse current tp = 8/20 s [1][2] Tj junction temperature Tamb ambient temperature Tstg storage temperature PPPM Min Max Unit - 11 W - 1.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 s pulse waveform according to IEC 61000-4-5 and IEC 61643-321 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 006aab321 1.2 &G S) PPPM PPPM(25°C) DDD 0.8 0.4 0 0 50 100 150 200 Tj (°C) 95 9 f = 1 MHz; Tamb = 25 C Fig 3. Relative variation of rated peak pulse power as a function of junction temperature; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values I −VCL −VBR −VRWM V −IRM −IR − + P-N −IPP −IPPM Fig 5.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 7. Application information The device is designed for the protection of one unidirectional data or signal line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are either positive or negative with respect to ground.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 8. Package outline 'LPHQVLRQV LQ PP Fig 10. Package outline DSN0603-2 (SOD962) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 10. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962 0.85 0.4 0.4 R0.025 (8×) 0.22 (2×) 0.12 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962_fr Fig 11.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0L1USF v.1 20120712 Product data sheet - - PESD5V0L1USF Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2012 © NXP B.V. 2012. All rights reserved.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
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PESD5V0L1USF NXP Semiconductors Low capacitance unidirectional ESD protection diode 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .