Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesPESD5V0L2UMB,315

1. Product profile

1.1 General description

Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection array

designed to protect up to two signal lines from the damage caused by ESD and other

transients. The device is housed in a leadless ultra small SOT883B Surface-Mounted

Device (SMD) plastic package.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PESD5V0L2UMB

Low capacitance unidirectional double ESD protection array

Rev. 1 — 21 February 2012 Product data sheet

SOT883B

 ESD protection of up to two lines  ESD protection up to 15 kV

 Low diode capacitance C

=16pF  IEC 61000-4-2; level 4 (ESD)

 Low clamping voltage V

=10V  IEC 61000-4-5 (surge); I

PPM

=2.5A

 Ultra low leakage current I

=5nA  AEC-Q101 qualified

 Computers and peripherals  Portable electronics

 Audio and video equipment  SIM card protection

 Cellular handsets and accessories  Communication systems

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

RWM

reverse standoff voltage - - 5 V

diode capacitance f = 1 MHz; V

= 0 V - 16 19 pF

Summary of content (13 pages)

PAGE 1
83B PESD5V0L2UMB SO T8 Low capacitance unidirectional double ESD protection array Rev. 1 — 21 February 2012 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. 1.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 cathode 1 3 common anode 2 Simplified outline Graphic symbol 3 3 Transparent top view 1 2 006aac923 3. Ordering information Table 3. Ordering information Type number Package PESD5V0L2UMB Name Description Version - leadless ultra small plastic package; 3 solder lands; body 1.0  0.6  0.37 mm SOT883B 4. Marking Table 4.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions rated peak pulse current tp = 8/20 s Min Max Unit - 2.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 2. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 s pulse waveform according to IEC 61000-4-5 and IEC 61643-321 Fig 3. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array I 006aac924 16 Cd (pF) 12 −VCL −VBR −VRWM V −IRM −IR 8 − 4 + P-N −IPP 0 0 1 2 3 4 5 −IPPM VR (V) 006aab324 f = 1 MHz; Tamb = 25 C Fig 4. Diode capacitance as a function of reverse voltage; typical values PESD5V0L2UMB Product data sheet Fig 5. V-I characteristics for a unidirectional ESD protection diode All information provided in this document is subject to legal disclaimers. Rev.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array ESD TESTER Rd 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 network Cs = 150 pF; Rd = 330 Ω vertical scale = 20 V/div horizontal scale = 10 ns/div vertical scale = 2 kV/div horizontal scale = 10 ns/div GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) vertical sca
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 7. Application information The device is designed for the protection of up to two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The device may be used on lines where the signal polarities are either positive or negative with respect to ground.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 9. Package outline 0.65 0.55 0.40 0.34 0.35 0.20 0.12 1 0.04 max 2 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm Fig 8. 11-11-02 Package outline SOT883B 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 11. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Reflow soldering is the only recommended soldering method. Fig 9.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0L2UMB v.1 20120221 Product data sheet - - PESD5V0L2UMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 February 2012 © NXP B.V. 2012. All rights reserved.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.
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PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . .