Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesPESD5V0L4UG,115

1. Product proﬁle

1.1 General description

Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode

arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to

four signal lines from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

PESDxL4UF; PESDxL4UG;

PESDxL4UW

Low capacitance unidirectional quadruple ESD protection

diode arrays

Rev. 04 — 28 February 2008 Product data sheet

Table 1. Product overview

Type number Package Package conﬁguration

NXP JEITA JEDEC

PESD3V3L4UF SOT886 - MO-252 leadless ultra small

PESD5V0L4UF SOT886 - MO-252 leadless ultra small

PESD3V3L4UG SOT353 SC-88A - very small

PESD5V0L4UG SOT353 SC-88A - very small

PESD3V3L4UW SOT665 - - ultra small and ﬂat lead

PESD5V0L4UW SOT665 - - ultra small and ﬂat lead

n ESD protection of up to four lines n Ultra low leakage current: I

=5nA

n Low diode capacitance n ESD protection up to 20 kV

n Max. peak pulse power: P

=30W n IEC 61000-4-2; level 4 (ESD)

n Low clamping voltage: V

=12V n IEC 61000-4-5 (surge); I

= 2.5 A

n Computers and peripherals n Communication systems

n Audio and video equipment n Portable electronics

n Cellular handsets and accessories n Subscriber Identity Module (SIM) card

protection

Summary of content (17 pages)

PAGE 1
PESDxL4UF; PESDxL4UG; PESDxL4UW Low capacitance unidirectional quadruple ESD protection diode arrays Rev. 04 — 28 February 2008 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW - - 3.3 V PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW - - 5.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 3. Ordering information Table 4. Ordering information Type number Package PESD3V3L4UF Name Description Version XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm SOT886 SC-88A plastic surface-mounted package; 5 leads SOT353 - plastic surface-mounted package; 5 leads SOT665 PESD5V0L4UF PESD3V3L4UG PESD5V0L4UG PESD3V3L4UW PESD5V0L4UW 4.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit IZSM non-repetitive peak reverse square wave; current tp = 1 ms PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW - 0.9 A PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW - 0.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % t tr = 0.7 ns to 1 ns 0 0 10 20 30 30 ns 40 t (µs) 60 ns Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays Table 9. Characteristics …continued Tamb = 25 °C unless otherwise specified.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 006aab134 10 IZSM (A) 006aab135 102 PZSM (W) (1) 1 10 (1) (2) (2) 10−1 10−2 10−1 1 1 10−2 10 10−1 1 tp (ms) 10 tp (ms) Tamb = 25 °C Tamb = 25 °C (1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW (1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW (2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW (2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW Fig 3.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays I −VCL −VBR −VRWM V −IRM −IR − + P-N −IPP 006aaa407 Fig 7. V-I characteristics for a unidirectional ESD protection diode PESDXL4UF_G_W_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax DIGITIZING OSCILLOSCOPE 10× ATTENUATOR (1) CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω 50 Ω DUT DEVICE UNDER TEST (1): attenuator is only used for open socket high voltage measurements vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div PESD5V0L4UF/G/W GND2 PESD3V3L4UF/G/W GND GND1 unclamped
PAGE 10
PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 7. Application information The devices are designed for the protection of up to four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. The devices provide a surge capability of 30 W per line for an 8/20 µs waveform each.
PAGE 11
PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 8. Package outline 0.50 max 1.05 0.95 2.2 1.8 0.04 max 0.6 3 4 2 5 1 6 0.40 0.32 0.35 0.27 5 0.45 0.15 4 0.25 0.17 0.5 1.5 1.4 1.1 0.8 2.2 1.35 2.0 1.15 0.5 1 2 3 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 04-07-22 Dimensions in mm Fig 10. Package outline PESDxL4UF (SOT886) 04-11-16 Fig 11. Package outline PESDxL4UG (SOT353/SC-88A) 1.7 1.5 0.6 0.5 5 4 0.3 0.1 1.7 1.5 1.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 13
PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 2.65 0.60 (1×) 0.40 0.90 2.10 2.35 0.50 (4×) solder lands 0.50 (4×) solder paste 1.20 solder resist 2.40 occupied area Dimensions in mm sot353_fr Fig 14. Reflow soldering footprint PESDxL4UG (SOT353/SC-88A) 2.25 2.65 0.30 1.00 4.00 4.50 2.70 0.70 solder lands 1.15 3.75 solder resist transport direction during soldering occupied area Dimensions in mm Fig 15.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 2.45 2.10 1.60 0.15 (2x) 0.70 (2×) 0.40 (5×) 0.45 (2×) 2.00 1.70 1.00 0.30 0.55 0.375 (2×) 1.25 1.375 1.20 2.20 solder lands placement area solder resist occupied area 0.075 Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 16. Reflow soldering footprint PESDxL4UW (SOT665) PESDXL4UF_G_W_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 11. Revision history Table 11.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PESDxL4UF/G/W NXP Semiconductors Low capacitance unidirectional quadruple ESD protection diode arrays 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . .