Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesPESD5V0S1BA,115

1. Product proﬁle

1.1 General description

Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD

plastic packages designed to protect one signal line from the damage caused by ESD and

other transients.

1.2 Features

1.3 Applications

1.4 Quick reference data

PESD5V0S1BA;PESD5V0S1BB;

PESD5V0S1BL

Low capacitance bidirectional ESD protection diodes

Rev. 04 — 20 August 2009 Product data sheet

Table 1. Product overview

Type number Package

NXP JEITA

PESD5V0S1BA SOD323 SC-76

PESD5V0S1BB SOD523 SC-79

PESD5V0S1BL SOD882 -

n Bidirectional ESD protection of one line n ESD protection > 30 kV

n Max. peak pulse power: P

= 130 W n IEC 61000-4-2, level 4 (ESD)

n Low clamping voltage: V

(CL)R

= 14 V n IEC 61000-4-5 (surge); I

= 12 A

n Ultra low leakage current: I

= 5 nA n Ultra small SMD plastic packages

n Cellular handsets and accessories n Communication systems

n Portable electronics n Audio and video equipment

n Computers and peripherals

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

RWM

reverse stand-off voltage - - 5 V

diode capacitance V

= 0 V;

f = 1 MHz

- 3545pF

Summary of content (15 pages)

PAGE 1
PESD5V0S1BA; PESD5V0S1BB; PESD5V0S1BL Low capacitance bidirectional ESD protection diodes Rev. 04 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD plastic packages designed to protect one signal line from the damage caused by ESD and other transients. Table 1. Product overview Type number Package NXP JEITA PESD5V0S1BA SOD323 SC-76 PESD5V0S1BB SOD523 SC-79 PESD5V0S1BL SOD882 - 1.
PAGE 2
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOD323, SOD523 1 cathode 1 2 cathode 2 1 2 1 2 sym045 001aab540 SOD882 1 cathode 1 2 cathode 2 1 2 1 2 sym045 Transparent top view 3. Ordering information Table 4.
PAGE 3
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 001aaa191 Ipp mle218 120 100 % 90 % 100 % Ipp; 8 µs Ipp (%) 80 e−t 50 % Ipp; 20 µs 40 10 % tr = 0.7 to 1 ns 0 0 Fig 1. 10 20 30 40 t (µs) 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2 PESD5V0S1BA_BB_BL_4 Product data sheet t 30 ns © NXP B.V. 2009. All rights reserved. Rev.
PAGE 5
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 6. Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit - - 5 V - 5 100 nA Per diode VRWM reverse stand-off voltage IRM reverse leakage current VRWM = 5 V; see Figure 6 V(CL)R clamping voltage IPP = 1 A [1][2] - - 10 V IPP = 12 A [1][2] - - 14 V V(BR) breakdown voltage IR = 1 mA 5.5 - 9.
PAGE 6
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 001aaa202 103 001aaa193 1.2 PPP PPP(25°C) Ppp (W) 0.8 102 0.4 10 1 102 10 103 0 104 0 50 100 150 t p (µs) 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power dissipation as a function of exponential time duration tp; typical values 001aaa203 38 Cd (pF) Fig 4.
PAGE 7
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ PESD5V0S1Bx IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale
PAGE 8
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 7. Application information PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may be used on lines where the signal polarities are above and below ground. They provide a surge capability of up to 130 W per line for a 8/20 µs waveform. signal line PESD5V0S1Bx GND 006aaa057 Fig 8.
PAGE 9
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 8. Package outline Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1.
PAGE 10
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode.
PAGE 11
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm L SOD882 L 1 2 b e1 A A1 E D (2) 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b D E e1 L mm 0.50 0.46 0.03 0.55 0.47 0.62 0.55 1.02 0.95 0.65 0.30 0.22 Notes 1. Including plating thickness 2.
PAGE 12
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 13
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 10. Revision history Table 11. Revision history Document ID Release date PESD5V0S1BA_BB_BL_4 20090820 Modifications: Data sheet status Change notice Supersedes Product data sheet - PESD5V0S1BA_BB_BL_3 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
PAGE 14
PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 15
NXP Semiconductors PESD5V0S1BA/BB/BL Low capacitance bidirectional ESD protection diodes 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .