Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesPESD5V0S2BT,215

1. Product proﬁle

1.1 General description

Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a

small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to

protect two data lines from the damage caused by ESD and other transients.

1.2 Features

n Bidirectional ESD protection of two lines

n Low diode capacitance

n Max. peak pulse power: P

= 130 W at t

= 8/20 µs

n Low clamping voltage: V

= 14 V at I

=12A

n Ultra low leakage current: I

= 5 nA at V

RWM

=5V

n ESD protection up to 30 kV

n IEC 61000-4-2; level 4 (ESD)

n IEC 61000-4-5 (surge); I

= 12 A at t

= 8/20 µs

1.3 Applications

n Cellular handsets and accessories

n Portable electronics

n Computers and peripherals

n Communication systems

n Audio and video equipment

1.4 Quick reference data

PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

Rev. 03 — 9 February 2009 Product data sheet

Table 1. Quick reference data

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

RWM

reverse standoff voltage - - 5 V

diode capacitance f = 1 MHz;

=0V

- 3545pF

Summary of content (12 pages)

PAGE 1
PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD and other transients. 1.2 Features n n n n n n n n Bidirectional ESD protection of two lines Low diode capacitance Max.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 cathode 1 2 cathode 2 3 double cathode Graphic symbol 3 1 1 3 2 2 sym031 3. Ordering information Table 3. Ordering information Type number Package Name PESD5V0S2BT - Description Version plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode Table 6. ESD maximum ratings Symbol Parameter Conditions electrostatic discharge voltage VESD IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 3 or pin 2 to 3. Table 7.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode 6. Characteristics Table 8. Electrical characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 5 V - 5 100 nA Per diode VRWM reverse standoff voltage IRM reverse leakage current VRWM = 5 V VCL clamping voltage IPP = 1 A [1][2] - - 10 V IPP = 12 A [1][2] - - 14 V VBR breakdown voltage IR = 1 mA 5.5 - 9.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode 001aaa634 38 Cd (pF) 001aaa635 102 IR IR(85 °C) 34 10 30 1 26 10−1 22 0 1 2 3 4 75 5 VR (V) Tamb = 25 °C; f = 1 MHz Fig 5. 125 Tj (°C) 150 IR < 1 nA measured at Tamb = 25 °C Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse current as a function of junction temperature; typical values PESD5V0S2BT_3 Product data sheet 100 © NXP B.V. 2009.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ PESD5V0S2BT IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scal
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode 7. Application information The PESD5V0S2BT is designed for the bidirectional protection of two lines from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD5V0S2BT may be used on lines where the signal polarities are both, positive and negative with respect to ground. The PESD5V0S2BT provides a surge capability of 130 W per line for an 8/20 µs waveform.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode 8. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm Fig 9. 0.15 0.09 04-11-04 Package outline SOT23 (TO-236AB) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 10. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 11.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0S2BT_3 20090209 Product data sheet - PESD5V0S2BT_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PESD5V0S2BT NXP Semiconductors Low capacitance bidirectional double ESD protection diode 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .