Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesPESD5V0S4UF,115

1. Product proﬁle

1.1 General description

Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small

SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four

signal lines from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

1.4 Quick reference data

PESD3V3S4UF; PESD5V0S4UF

Unidirectional quadruple ESD protection diode arrays

Rev. 01 — 17 January 2008 Product data sheet

n ESD protection of up to four lines n ESD protection up to 30 kV

n Max. peak pulse power: P

= 110 W n IEC 61000-4-2; level 4 (ESD)

n Low clamping voltage: V

=11V n IEC 61000-4-5 (surge); I

=10A

n Ultra low leakage current: I

=4nA n AEC-Q101 qualiﬁed

n Computers and peripherals n Communication systems

n Audio and video equipment n Portable electronics

n Cellular handsets and accessories

Table 1. Quick reference data

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

RWM

reverse standoff voltage

PESD3V3S4UF - - 3.3 V

PESD5V0S4UF - - 5.0 V

diode capacitance f = 1 MHz; V

=0V

PESD3V3S4UF - 110 300 pF

PESD5V0S4UF - 85 220 pF

Summary of content (13 pages)

PAGE 1
PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays Rev. 01 — 17 January 2008 Product data sheet 1. Product profile 1.1 General description Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features n n n n ESD protection of up to four lines Max.
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PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 2. Pinning information Table 2. Pinning Pin Description 1 cathode (diode 1) 2 common anode 3 4 5 common anode 6 cathode (diode 4) Simplified outline 1 2 Symbol 3 1 6 cathode (diode 2) 2 5 cathode (diode 3) 3 4 6 5 bottom view 006aaa156 4 3. Ordering information Table 3.
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PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
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PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD3V3S4UF - - 3.3 V PESD5V0S4UF - - 5.0 V Per diode VRWM IR VBR reverse standoff voltage reverse current PESD3V3S4UF VR = 3.0 V - 100 1000 nA PESD5V0S4UF VR = 4.3 V - 4 100 nA 5.32 5.6 5.88 V 6.46 6.8 7.
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PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 006aab146 104 PPP (W) 001aaa633 1.2 PPP PPP(25°C) 103 0.8 102 0.4 10 1 1 102 10 103 104 0 0 50 100 150 tp (µs) 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values 006aab147 120 Cd (pF) Fig 4.
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NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays I −VCL −VBR −VRWM V −IRM −IR − + P-N −IPP 006aaa407 Fig 7. V-I characteristics for a unidirectional ESD protection diode PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax DIGITIZING OSCILLOSCOPE 10× ATTENUATOR (1) 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω DUT Device Under Test (1): attenuator is only used for open socket high voltage measurements vertical scale = 100 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div PESD5V0S4UF PESD3V3S4UF GND unclamped +1 kV ESD voltage wavefor
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NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays 7. Application information The PESDxS4UF is designed for the protection of up to four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The PESDxS4UF may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESDxS4UF provides a surge capability of 110 W per line for an 8/20 µs waveform each.
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PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 8. Package outline 0.50 max 1.05 0.95 0.04 max 0.6 3 4 2 5 1 6 0.40 0.32 0.35 0.27 0.25 0.17 0.5 1.5 1.4 0.5 Dimensions in mm 04-07-22 Fig 10. Package outline PESDxS4UF (SOT886) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 10. Soldering 1.250 0.675 0.370 (6×) 0.500 1.700 solder lands 0.500 solder paste 0.270 (6×) occupied area Dimensions in mm 0.325 (6×) 0.425 (6×) sot886_fr Reflow soldering is the only recommended soldering method. Fig 11. Reflow soldering footprint PESDxS4UF (SOT886) PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 11. Revision history Table 10. Revision history Document ID Release date PESD3V3S4UF_PESD5V0S4UF_1 20080117 Data sheet status Change notice Supersedes Product data sheet - - PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 13
NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . .