Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesPESD5V0U4BW,115

1. Product proﬁle

1.1 General description

Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection

arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect

up to four signal lines from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

PESD5V0U4BF; PESD5V0U4BW

Ultra low capacitance bidirectional quadruple ESD

protection arrays

Rev. 01 — 15 August 2008 Product data sheet

Table 1. Product overview

Type number Package Package conﬁguration

NXP JEDEC

PESD5V0U4BF SOT886 MO-252 leadless ultra small

PESD5V0U4BW SOT665 - ultra small and ﬂat lead

n Bidirectional ESD protection of up to

four lines

n ESD protection up to 10 kV

n Ultra low diode capacitance: C

= 2.9 pF n IEC 61000-4-2; level 4 (ESD)

n Ultra low leakage current: I

=5nA n AEC-Q101 qualiﬁed

n Computers and peripherals n Portable electronics

n Audio and video equipment n Subscriber Identity Module (SIM) card

protection

n Cellular handsets and accessories n FireWire

n 10/100/1000 Mbit/s Ethernet n High-speed data lines

n Communication systems

Summary of content (12 pages)

PAGE 1
PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays Rev. 01 — 15 August 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1.
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PESD5V0U4BF; PESD5V0U4BW NXP Semiconductors Ultra low capacitance bidirectional quadruple ESD protection arrays 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 5 V f = 1 MHz; VR = 0 V - 2.9 3.5 pF Per diode VRWM reverse standoff voltage Cd diode capacitance 2. Pinning information Table 3.
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PESD5V0U4BF; PESD5V0U4BW NXP Semiconductors Ultra low capacitance bidirectional quadruple ESD protection arrays 4. Marking Table 5. Marking codes Type number Marking code PESD5V0U4BF B1 PESD5V0U4BW A6 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 7.
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PESD5V0U4BF; PESD5V0U4BW NXP Semiconductors Ultra low capacitance bidirectional quadruple ESD protection arrays Table 8. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 IPP 100 % 90 % 10 % tr = 0.7 ns to 1 ns t 30 ns 60 ns Fig 1. ESD pulse waveform according to IEC 61000-4-2 PESD5V0U4BF_PESD5V0U4BW_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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PESD5V0U4BF; PESD5V0U4BW NXP Semiconductors Ultra low capacitance bidirectional quadruple ESD protection arrays 6. Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage - - 5 V IRM reverse leakage current VRWM = 5 V - 5 100 nA VBR breakdown voltage IR = 5 mA 5.5 6.5 9.5 V Cd diode capacitance f = 1 MHz VR = 0 V - 2.9 3.5 pF VR = 5 V - 1.
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PESD5V0U4BF; PESD5V0U4BW NXP Semiconductors Ultra low capacitance bidirectional quadruple ESD protection arrays ESD TESTER 450 Ω RZ RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω DUT (DEVICE UNDER TEST) vertical scale = 10 A/div horizontal scale = 15 ns/div vertical scale = 10 V/div horizontal scale = 100 ns/div GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform (IEC 61000-4-2
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PESD5V0U4BF; PESD5V0U4BW NXP Semiconductors Ultra low capacitance bidirectional quadruple ESD protection arrays 7. Application information The PESD5V0U4BF and the PESD5V0U4BW are designed for the protection of up to four bidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. data- or transmission lines DUT 1 6 2 5 3 4 006aab335 Fig 5.
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PESD5V0U4BF; PESD5V0U4BW NXP Semiconductors Ultra low capacitance bidirectional quadruple ESD protection arrays 9. Package outline 0.50 max 1.05 0.95 1.7 1.5 0.04 max 0.6 3 4 2 5 1 6 0.40 0.32 0.35 0.27 0.6 0.5 5 4 0.25 0.17 0.3 0.1 0.5 1.5 1.4 1.7 1.5 1.3 1.1 0.5 1 3 0.18 0.08 0.27 0.17 0.5 1 Dimensions in mm Fig 6. 2 04-07-22 Package outline PESD5V0U4BF (SOT886) Dimensions in mm Fig 7. 04-11-08 Package outline PESD5V0U4BW (SOT665) 10. Packing information Table 10.
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PESD5V0U4BF; PESD5V0U4BW NXP Semiconductors Ultra low capacitance bidirectional quadruple ESD protection arrays 11. Soldering 1.250 0.675 0.370 (6×) 0.500 1.700 solder lands 0.500 solder paste 0.270 (6×) occupied area Dimensions in mm 0.325 (6×) 0.425 (6×) sot886_fr Reflow soldering is the only recommended soldering method. Fig 8. Reflow soldering footprint PESD5V0U4BF (SOT886) 2.45 2.1 1.6 solder lands 0.4 (5×) 0.7 (2×) placement area 2 1 0.25 0.3 0.55 solder paste 0.45 0.
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NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays 12. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0U4BF_PESD5V0U4BW_1 20080815 Product data sheet - - PESD5V0U4BF_PESD5V0U4BW_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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PESD5V0U4BF; PESD5V0U4BW NXP Semiconductors Ultra low capacitance bidirectional quadruple ESD protection arrays 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . .