Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesPESD5V0V4UK,132

1. Product profile

1.1 General description

Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection

diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic

package designed to protect up to four unidirectional signal lines from the damage caused

by ESD and other transients.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PESD3V3V4UK;

PESD5V0V4UK; PESD9V0V4UK

Very low capacitance unidirectional quadruple ESD protection

diode arrays

Rev. 1 — 25 August 2010 Product data sheet

 ESD protection of up to four lines  Very low leakage current: I

=0.1μA

 Very low diode capacitance  ESD protection up to 15 kV

 Max. peak pulse power: P

=28W  IEC 61000-4-2; level 4 (ESD)

 Low clamping voltage: V

=9.5V  IEC 61000-4-5 (surge); I

=2.7A

 AEC-Q101 qualified

 Computers and peripherals  Communication systems

 Audio and video equipment  Portable electronics

 Cellular handsets and accessories  Subscriber Identity Module (SIM) card

protection

Table 1. Quick reference data

amb

=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

RWM

reverse standoff voltage

PESD3V3V4UK - - 3.3 V

PESD5V0V4UK - - 5.0 V

PESD9V0V4UK - - 9.0 V

Summary of content (15 pages)

PAGE 1
PESD3V3V4UK; PESD5V0V4UK; PESD9V0V4UK Very low capacitance unidirectional quadruple ESD protection diode arrays Rev. 1 — 25 August 2010 Product data sheet 1. Product profile 1.1 General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package designed to protect up to four unidirectional signal lines from the damage caused by ESD and other transients. 1.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays Table 1. Quick reference data …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3V4UK - 13 17 pF PESD5V0V4UK - 12 15 pF PESD9V0V4UK - 6.5 10 pF 2. Pinning information Table 2.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions peak pulse power tp = 8/20 μs Min Max Unit - 25 W - 28 W Per diode PPP [1][2] PESD3V3V4UK PESD5V0V4UK PESD9V0V4UK peak pulse current IPP tp = 8/20 μs [1][2] - - PESD3V3V4UK - 2.7 A PESD5V0V4UK - 2.5 A PESD9V0V4UK - 1.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 8/20 μs pulse waveform according to IEC 61000-4-5 PESDXV4UK_SER Product data sheet 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. Rev.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD3V3V4UK - - 3.3 V PESD5V0V4UK - - 5.0 V PESD9V0V4UK - - 9.0 V Per diode VRWM IRM VBR Cd reverse standoff voltage reverse leakage current PESD3V3V4UK VRWM = 3.3 V - 0.13 1 μA PESD5V0V4UK VRWM = 5.0 V - 0.05 0.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 006aac379 102 006aac380 102 PPP (W) PPP (W) 10 10 1 1 10 102 103 1 104 1 10 tp (μs) 102 103 tp (μs) Tamb = 25 °C Tamb = 25 °C (1) PESD3V3V4UK (1) PESD9V0V4UK (2) PESD5V0V4UK Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Peak pulse power as a function of exponential pulse duration; typical values 001aaa633 1.2 PPP PPP(25°C) 0.8 0.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 006aac381 16.0 006aac382 10 Cd (pF) IRM IRM(25°C) 12.0 (3) (2) (1) (1) 8.0 1 (1) (2) (2) (3) 4.0 (3) 0.0 0.0 2.0 4.0 6.0 8.0 10−1 −75 10.0 VR (V) −25 0 25 50 75 Tj (°C) f = 1 MHz; Tamb = 25 °C (1) PESD3V3V4UK (1) PESD3V3V4UK (2) PESD5V0V4UK (2) PESD5V0V4UK (3) PESD9V0V4UK (3) PESD9V0V4UK Fig 6. Diode capacitance as a function of reverse voltage; typical values Fig 7.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ DUT (DEVICE UNDER TEST) IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 40 V/div horizontal scale = 50 ns/div vertical scale = 2 kV/div horizontal scale = 15 ns/div PESD3V3V4UK GND PESD5V0V4UK GND PESD9V0V4UK GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 7. Application information The PESDxV4UK series is designed for the protection of up to four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 9. Package outline 1.05 0.95 0.5 max 0.04 max 0.55 3 4 2 5 1 6 0.35 1.05 0.95 0.20 0.12 0.35 0.40 0.32 0.35 0.27 Dimensions in mm 07-05-15 Fig 11. Package outline SOT891 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 11. Soldering 1.05 0.5 (6×) 1.4 0.6 (6×) solder resist solder land plus solder paste 0.7 occupied area Dimensions in mm 0.15 (6×) 0.25 (6×) 0.35 sot891_fr Reflow soldering is the only recommended soldering method. Fig 12. Reflow soldering footprint SOT891 PESDXV4UK_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXV4UK_SER v.1 20100825 Product data sheet - - PESDXV4UK_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14.
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PESDxV4UK series NXP Semiconductors Very low capacitance unidirectional quadruple ESD protection arrays 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . .