Datasheet

Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP27NQ10T, PHB27NQ10T
PHD27NQ10T
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Low on-state resistance V
DSS
= 100 V
• Fast switching
• Low thermal resistance I
D
= 28 A
R
DS(ON)
≤ 50 mΩ
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB27NQ10T is supplied in the SOT404 (D
2
PAK) surface mounting package.
The PHD27NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
PINNING SOT78 (TO220AB) SOT404 (D
2
PAK) SOT428 (DPAK)
PIN DESCRIPTION
1 gate
2 drain
1
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage T
j
= 25 ˚C to 175˚C - 100 V
V
DGR
Drain-gate voltage T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ - 100 V
V
GS
Gate-source voltage - ± 20 V
I
D
Continuous drain current T
mb
= 25 ˚C; V
GS
= 10 V - 28 A
T
mb
= 100 ˚C; V
GS
= 10 V - 20 A
I
DM
Pulsed drain current T
mb
= 25 ˚C - 112 A
P
D
Total power dissipation T
mb
= 25 ˚C - 107 W
T
j
, T
stg
Operating junction and - 55 175 ˚C
storage temperature
d
g
s
123
tab
13
tab
2
1
2
3
tab
1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
August 1999 1 Rev 1.000