Datasheet

PHB45NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 8 July 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Low conduction losses due to low
on-state resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC convertors  Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
=25°C; V
GS
=10V --47A
P
tot
total power
dissipation
T
mb
=25°C --150W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=25°C
- 2225mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=45A;
V
DS
=80V; T
j
=25°C
-25-nC