DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBD6100 High-speed double diode Product data sheet Supersedes data of 1999 May 11 2003 Mar 25
NXP Semiconductors Product data sheet High-speed double diode PMBD6100 PINNING FEATURES DESCRIPTION • Small plastic SMD package The PMBD6100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 70 V PIN DESCRIPTION 1 anode (a1) 2 anode (a2) 3 common cathode • Repetitive peak reverse voltage: max.
NXP Semiconductors Product data sheet High-speed double diode SYMBOL PMBD6100 PARAMETER IFRM repetitive peak forward current IFSM non-repetitive peak forward current CONDITIONS MIN. MAX. UNIT − 450 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 250 mW square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1.
NXP Semiconductors Product data sheet High-speed double diode PMBD6100 GRAPHICAL DATA MBD033 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.
NXP Semiconductors Product data sheet High-speed double diode PMBD6100 MBG379 2 10halfpage handbook, Cd (pF) IR (µA) 0.6 10 (1) 1 10 MBG446 0.8 handbook, halfpage (2) (3) 0.4 1 0.2 10 2 0 100 Tj (oC) 0 0 200 (1) VR = 50 V; maximum values. (2) VR = 50 V; typical values. (3) VR = 30 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature.
NXP Semiconductors Product data sheet High-speed double diode PMBD6100 handbook, full pagewidth tr tp t D.U.T. IF RS = 50 Ω 10% IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms.
NXP Semiconductors Product data sheet High-speed double diode PMBD6100 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet High-speed double diode PMBD6100 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
