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1. Product proﬁle

1.1 General description

PNP/PNP double switching transistor in a SOT666 ultra small and ﬂat lead

Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Double general-purpose switching transistor

n Board-space reduction

n AEC-Q101 qualiﬁed

n Ultra small and ﬂat lead SMD plastic package

1.3 Applications

n General-purpose switching and ampliﬁcation

1.4 Quick reference data

PMBT3906VS

40 V, 200 mA PNP/PNP switching transistor

Rev. 01 — 20 August 2009 Product data sheet

Table 1. Product overview

Type number Package NPN/NPN

complement

NPN/PNP

complement

NXP JEITA

PMBT3906VS SOT666 - PMBT3904VS PMBT3946VPN

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - −40 V

collector current - - −200 mA

DC current gain V

= −1V;

= −10 mA

100 180 300

Summary of content (11 pages)

PAGE 1
PMBT3906VS 40 V, 200 mA PNP/PNP switching transistor Rev. 01 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PMBT3906VS Package NXP JEITA NPN/NPN complement SOT666 - PMBT3904VS NPN/PNP complement PMBT3946VPN 1.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 Graphic symbol 6 4 5 4 TR2 TR1 1 2 3 1 2 3 sym018 3. Ordering information Table 4. Ordering information Type number PMBT3906VS Package Name Description Version - plastic surface-mounted package; 6 leads SOT666 4. Marking Table 5.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor 006aab605 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Cc collector capacitance VCB = −5 V; IE = ie = 0 A; f = 1 MHz - - 4.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor 006aab123 −1.2 006aab124 −1.2 VBE (V) VBEsat (V) −1.0 −1.0 (1) (1) −0.8 (2) −0.6 −0.8 (2) −0.6 (3) (3) −0.4 −0.4 −0.2 −10−1 −1 −10 −102 −0.2 −10−1 −103 −1 IC (mA) −102 −103 IC (mA) VCE = −1 V IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Fig 5.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor 8. Test information VBB RB oscilloscope VCC RC Vo (probe) (probe) 450 Ω 450 Ω oscilloscope R2 VI DUT R1 mgd624 VI = 5 V; t = 600 µs; tp = 10 µs; tr = tf ≤ 3 ns R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω VBB = 1.9 V; VCC = −3 V Oscilloscope: input impedance Zi = 50 Ω Fig 8. Test circuit for switching times 8.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description PMBT3906VS SOT666 [1] Packing quantity 4000 8000 2 mm pitch, 8 mm tape and reel - -315 4 mm pitch, 8 mm tape and reel -115 - For further information and the availability of packing methods, see Section 14. 11. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBT3906VS_1 20090820 Product data sheet - - PMBT3906VS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .