DF N1 0 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . 5. Pinning information Table 2.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 7. Marking Table 4. Marking codes Type number Marking code PMCXB900UE 10 00 00 MARKING CODE (EXAMPLE) READING DIRECTION MARK-FREE AREA PIN 1 INDICATION MARK VENDOR CODE READING EXAMPLE: 11 01 10 Fig. 1. YEAR DATE CODE aaa-007665 DFN1010B-6 (SOT1216) binary marking code description 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET Symbol Parameter Conditions ID drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-008997 10 Limit RDSon = VDS/ID ID (A) tp = 10 µs 1 tp = 100 µs 10-1 tp = 1 ms DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 10-1 1 tp = 100 ms 10 VDS (V) 102 IDM = single pulse Fig. 4.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 9. Thermal characteristics Table 6.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-006903 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 7. 1 102 10 103 tp (s) 2 TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 600 mA; VGS = 4.5 V; - 0.4 0.7 nC QGS gate-source charge Tj = 25 °C - 0.1 - nC QGD gate-drain charge - 0.1 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 21.3 - pF Coss output capacitance Tj = 25 °C - 5.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 43 - pF Coss output capacitance Tj = 25 °C - 14 - pF Crss reverse transfer capacitance - 8 - pF td(on) turn-on delay time VDS = -10 V; ID = -450 mA; - 2.3 - ns tr rise time VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C - 5 - ns td(off) turn-off delay time - 13.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-009000 3 RDSon (Ω) 1.5 V 1.2 V 1.8 V aaa-009001 3 2V RDSon (Ω) 2.5 V 2 2 3V 1 1 Tj = 150 °C VGS = 4.5 V 0 0 0.5 1.0 1.5 2.0 ID (A) Tj = 25 °C 0 2.5 Tj = 25 °C 0 1 2 3 4 VGS (V) 5 ID = 0.6 A Fig. 10. TR1: drain-source on-state resistance as a function of drain current; typical values Fig. 11.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-009004 1.5 aaa-009005 102 VGS(th) (V) C (pF) 1.0 Ciss 10 max Coss 0.5 typ Crss min 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 0.25 mA; VDS = VGS 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 14. TR1: gate-source threshold voltage as a function of junction temperature Fig. 15.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-009007 2.5 aaa-006904 -2.0 IS (A) VGS = -4.5 V ID (A) 2.0 -3.5 V -1.5 -3 V 1.5 -1.0 -2.5 V -0.5 -1.8 V 1.0 0.5 Tj = 150 °C Tj = 25 °C -1.2 V 0 0 0.4 0.8 1.2 0.0 1.6 2.0 VSD (V) VGS = 0 V 0 -1 -2 -3 VDS (V) -4 Tj = 25 °C Fig. 18. TR1: source current as a function of sourcedrain voltage; typical values Fig. 19.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-006907 5 aaa-006908 -1.00 RDSon (Ω) ID (A) 4 Tj = 25 °C -0.75 Tj = 150 °C 3 -0.50 2 Tj = 150 °C -0.25 1 0 Tj = 25 °C 0 -1 -2 -3 -4 VGS (V) 0.00 -5 ID = -0.5 A 0 -1 -2 -3 VGS (V) -4 VDS > ID × RDSon Fig. 22. TR2: drain-source on-state resistance as a function of gate-source voltage; typical values aaa-006909 1.50 a Fig. 23.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-006911 102 aaa-006912 -5 VGS (V) Ciss -4 C (pF) Coss -3 10 Crss -2 -1 1 -10-1 -1 -10 VDS (V) 0 -102 0 0.2 0.4 QG (nC) 0.6 ID = -0.45 A; VDS = -10 V; Tamb = 25 °C f = 1 MHz; VGS = 0 V Fig. 26. TR2: input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig. 27. TR2: gate-source voltage as a function of gate charge; typical values aaa-006913 -2.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 11. Test information P t2 t1 t2 duty cycle δ = t1 t 006aaa812 Fig. 30. Duty cycle definition 12. Package outline 0.35 0.35 0.15 0.23 1 3 0.125 0.205 0.22 0.30 0.95 1.05 6 0.04 max 2 0.34 0.40 Dimensions in mm 5 4 0.32 0.40 0.275 0.275 1.05 1.15 13-03-05 Fig. 31. Package outline DFN1010B-6 (SOT1216) PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 (6x) 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1216_fr Fig. 32.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMCXB900UE v.1 20131007 Product data sheet - - PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013.
PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
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PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ........................
