Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMD2001D,115, MOSFET

1. Product proﬁle

1.1 General description

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)

Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Switching transistors in push-pull conﬁguration

n Application-optimized pinout

n Space-saving solution

n Internal connections to minimize layout effort

n Reduces component count

1.3 Applications

n MOSFET driver

n Power bipolar transistor driver

n Output current booster for operational ampliﬁer

1.4 Quick reference data

PMD2001D

MOSFET driver

Rev. 02 — 28 August 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

CEO

collector-emitter voltage open base - - 40 V

collector current - - 0.6 A

peak collector current single pulse;

≤ 1ms

--1A

Summary of content (15 pages)

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PMD2001D MOSFET driver Rev. 02 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features n n n n n Switching transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layout effort Reduces component count 1.
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PMD2001D NXP Semiconductors MOSFET driver 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 base TR1, TR2 2 collector TR2 3 collector TR2 4 emitter TR1, TR2 5 collector TR1 6 collector TR1 6 5 4 1 2 3 Symbol 6 5 TR1 1 4 TR2 2 3 006aaa659 3. Ordering information Table 3. Ordering information Type number PMD2001D Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4.
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PMD2001D NXP Semiconductors MOSFET driver 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 40 V IC collector current - 0.6 A ICM peak collector current - 1 A IBM peak base current - 0.1 A - 0.
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PMD2001D NXP Semiconductors MOSFET driver 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 390 K/W [2] - - 315 K/W [3] - - 230 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
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PMD2001D NXP Semiconductors MOSFET driver 006aaa770 103 duty cycle = Zth(j-a) (K/W) 102 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa771 103 duty cycle = Zth(j-a) (K/W) 102 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.
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PMD2001D NXP Semiconductors MOSFET driver 7. Characteristics Table 7.
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PMD2001D NXP Semiconductors MOSFET driver 006aaa772 800 hFE IB (mA) = 30 27 24 21 IC (A) (1) 600 006aaa777 1.2 18 15 12 9 0.8 400 6 (2) (3) 3 0.4 (4) 200 (5) 0 10−1 1 10 102 0 103 IC (mA) 0 2 4 6 8 10 VCE (V) Tamb = 25 °C VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 125 °C (3) Tamb = 100 °C (4) Tamb = 25 °C (5) Tamb = −55 °C Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 6. 006aaa773 1.
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PMD2001D NXP Semiconductors MOSFET driver 006aaa774 1 VCEsat (V) 006aaa775 1 VCEsat (V) (1) (2) (3) (1) (2) 10−1 10−1 10−2 10−1 1 10 102 103 (3) 10−2 10−1 1 IC (mA) 103 Tamb = 25 °C IC/IB = 20 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values Fig 10.
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PMD2001D NXP Semiconductors MOSFET driver 006aaa778 300 hFE 006aaa783 −1.2 IB (mA) = −25 −22.5 −20 −17.5 −15 −12.5 IC (A) (1) −0.8 200 −10 (2) −7.5 −5 100 −0.4 (3) 0 −10−1 −1 −10 −2.5 −102 −103 0 0 −2 −4 −6 IC (mA) VCE = −5 V −8 −10 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 11. TR2 (PNP): DC current gain as a function of collector current; typical values 006aaa779 −1.2 VBE (V) Fig 12.
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PMD2001D NXP Semiconductors MOSFET driver 006aaa780 −1 006aaa781 −1 VCEsat (V) VCEsat (V) (1) (2) (3) −10−1 (1) −10−1 (2) (3) −10−2 −10−1 −1 −10 −102 −10−2 −10−1 −103 IC (mA) −1 −10 −102 −103 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 15. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 16.
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PMD2001D NXP Semiconductors MOSFET driver 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 18. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PMD2001D NXP Semiconductors MOSFET driver 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 19. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 20. Wave soldering footprint SOT457 (SC-74) PMD2001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PMD2001D NXP Semiconductors MOSFET driver 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMD2001D_2 20090828 Product data sheet - PMD2001D_1 Modifications: PMD2001D_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PMD2001D NXP Semiconductors MOSFET driver 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMD2001D NXP Semiconductors MOSFET driver 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . .