Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesSchottky Diode

1. Product proﬁle

1.1 General description

Planar Maximum Efﬁciency General Application (MEGA) Schottky barrier rectiﬁer with an

integrated guard ring for stress protection, encapsulated in a SOD128 small and ﬂat lead

Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Average forward current: I

F(AV)

≤ 2A

n Reverse voltage: V

≤ 30 V

n Low forward voltage

n High power capability due to clip-bond technology

n AEC-Q101 qualiﬁed

n Small and ﬂat lead SMD plastic package

1.3 Applications

n Low voltage rectiﬁcation

n High efﬁciency DC-to-DC conversion

n Switch Mode Power Supply (SMPS)

n Reverse polarity protection

n Low power consumption applications

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al

, standard footprint.

PMEG3020BEP

2 A low V

MEGA Schottky barrier rectiﬁer

Rev. 01 — 16 October 2009 Product data sheet

Table 1. Quick reference data

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

F(AV)

average forward current square wave;

δ = 0.5;

f=20kHz

amb

≤ 100 °C

[1]

--2A

≤ 140 °C --2A

reverse voltage - - 30 V

forward voltage I

= 2 A - 400 450 mV

reverse current V

= 30 V - 35 100 µA

Summary of content (13 pages)

PAGE 1
PMEG3020BEP 2 A low VF MEGA Schottky barrier rectifier Rev. 01 — 16 October 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 1.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 1 2 2 sym001 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number PMEG3020BEP Package Name Description Version - plastic surface-mounted package; 2 leads SOD128 4. Marking Table 4.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Tj = 25 °C prior to surge. [3] Reflow soldering is the only recommended soldering method.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 006aab778 103 duty cycle = Zth(j-a) (K/W) 1 102 0.5 0.25 0.75 0.33 0.2 0.1 10 0.05 0.02 1 0.01 0 10−1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab779 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.75 0.33 0.2 0.1 10 0.05 0.02 0.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 102 006aab780 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.25 10 0.33 0.2 0.1 0.05 0.02 0.01 1 0 10−1 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 006aab781 10 IF (A) (1) 1 006aab782 10−1 IR (A) 10−2 (1) (2) (2) 10−3 10−1 10−4 (3) (4) (3) (5) 10−5 10−2 10−6 10−3 10−7 10−4 0.0 (4) 10−8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF (V) 0 10 20 30 VR (V) (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig 4.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 006aab784 1.0 PF(AV) (W) (4) 006aab785 0.6 PR(AV) (W) 0.8 (3) 0.4 0.6 (2) (1) (1) (2) (3) 0.4 0.2 (4) 0.2 0.0 0.0 0 1 2 3 0 10 20 IF(AV) (A) Tj = 150 °C Tj = 125 °C (1) δ = 0.1 (1) δ = 1 (2) δ = 0.2 (2) δ = 0.9 (3) δ = 0.5 (3) δ = 0.8 (4) δ = 1 (4) δ = 0.5 Fig 7. Average forward power dissipation as a function of average forward current; typical values 006aab786 3 Fig 8.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 006aab788 3 006aab789 3 (1) (1) IF(AV) (A) IF(AV) (A) (2) (2) 2 2 (3) (3) (4) 1 (4) 1 0 0 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C Ceramic PCB, Al2O3, standard footprint Tj = 150 °C (1) δ = 1; DC (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.
PAGE 9
PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 13. Duty cycle definition The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are calculated according to the equations: I F ( AV ) = I M × δ with IM defined as peak current, I RMS = I F ( AV ) at DC, and I RMS = I M × δ with IRMS defined as RMS current. 8.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 PMEG3020BEP [1] SOD128 4 mm pitch, 12 mm tape and reel -115 For further information and the availability of packing methods, see Section 14. 11. Soldering 6.2 4.4 4.2 solder lands solder resist 1.9 2.1 (2×) (2×) 3.4 2.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG3020BEP_1 20091016 Product data sheet - - PMEG3020BEP_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMEG3020BEP NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .